Abstract: A power semiconductor module includes a substrate of planar sheet metal including a plurality of islands that are each defined by channels that extend between upper and lower surfaces of the substrate, a first semiconductor die mounted on a first one of the islands, a molded body of encapsulant that covers the metal substrate, fills the channels, and encapsulates the first semiconductor die, a hole in the molded body that extends to a recess in the upper surface of the substrate, and a press-fit connector arranged in the hole such an interior end of the press-fit connector is mechanically and electrically connected to the substrate.

Abstract: A method of forming a power semiconductor module includes providing a substrate of planar sheet metal, forming channels in an upper surface of the substrate that partially extend through a thickness of the substrate and define a plurality of islands in the substrate, mounting a first semiconductor die on a first one of the islands, forming a molded body of encapsulant that covers the substrate, fills the channels, and encapsulates the semiconductor die, forming a hole in the molded body and a recess in the upper surface of the substrate beneath the hole, and arranging a press-fit connector in the hole and forming a mechanical and electrical connection between an interior end of the press-fit connector and the substrate.

Abstract: A circuit arrangement has a chip arrangement in the form of an embedded Wafer Level Ball Grid Array (eWLB) arrangement with solder contacts on one side and a thermal interface on a side of the chip arrangement facing away from the solder contacts which is designed to dissipate heat from the semiconductor chip. In examples, the thermal interface has a thermally and electrically conductive material, wherein in a top view of the chip arrangement, a contact area in which the thermally and electrically conductive material is in thermal contact with the chip arrangement is limited to the fan-out area. In examples, the thermal interface has at least one RF absorption layer which is designed to absorb electromagnetic radiation at an operating frequency of the semiconductor chip.

Abstract: A method of forming a power semiconductor module includes providing a substrate of planar sheet metal, forming channels in an upper surface of the substrate that partially extend through a thickness of the substrate and define a plurality of islands in the substrate, mounting a first semiconductor die on a first one of the islands, forming a molded body of encapsulant that covers the substrate, fills the channels, and encapsulates the semiconductor die, forming a hole in the molded body and a recess in the upper surface of the substrate beneath the hole, and arranging a press-fit connector in the hole and forming a mechanical and electrical connection between an interior end of the press-fit connector and the substrate.