Abstract: A transistor includes a semiconductor die, first and second transistor fingers formed in an active area of the semiconductor die, a first bond pad segment formed in the semiconductor die and electrically coupled to the first transistor finger, a second bond pad segment formed in the semiconductor die and electrically coupled to the second transistor finger, and a first odd-mode resistor circuit electrically coupled to the first and second bond pad segments. The second bond pad segment is adjacent to the first bond pad segment, and a first non-conductive gap is present between the first and second bond pad segments. The first odd-mode resistor circuit has a first resistor segment and a second resistor segment. The first and second resistor segments are arranged next to each other and oriented in parallel.

Abstract: A semiconductor die includes a transistor with a source region, a drain region, a channel between the source region and the drain region, and a gate structure overlying the channel. An electrical voltage applied to the gate structure is configured to control a conductivity of the channel. The semiconductor die includes a first gate terminal electrically connected to the gate structure and a first harmonic filter inductor formed in a body of the semiconductor die. The first harmonic filter inductor is electrically connected to the first gate terminal. The semiconductor die includes a first harmonic filter capacitor formed in the body of the semiconductor die. The first harmonic filter capacitor includes a first capacitor plate electrically connected to the first harmonic filter inductor and a second capacitor plate connected to a ground reference node.