Abstract: A method of making a semiconductor structure, the method including providing a silicon on insulator (SOI) substrate having a first epitaxial layer and a bulk silicon substrate separated by a buried oxide layer. The method further includes performing a local oxidation of silicon (LOCOS) process in a region of the SOI substrate to at least partially oxidize the first epitaxial silicon layer in the region, and locally etching the SOI substrate in the region to create a trench through the buried oxide layer and to the bulk silicon substrate. The method further includes forming a second epitaxial layer on the bulk silicon substrate in the trench, and forming one or more semiconductor devices in the first and second epitaxial layers.

Abstract: A method of making a semiconductor structure, the method including providing a silicon on insulator (SOI) substrate having a first epitaxial layer and a bulk silicon substrate separated by a buried oxide layer. The method further includes performing a local oxidation of silicon (LOCOS) process in a region of the SOI substrate to at least partially oxidize the first epitaxial silicon layer in the region, and locally etching the SOI substrate in the region to create a trench through the buried oxide layer and to the bulk silicon substrate. The method further includes forming a second epitaxial layer on the bulk silicon substrate in the trench, and forming one or more semiconductor devices in the first and second epitaxial layers.