Patents by Inventor Raphael Lante

Raphael Lante has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9051213
    Abstract: A process for manufacturing a hydrophobic glazing by: (i) forming a carbon-rich SiOxCy layer at a surface of a mineral glass substrate via CVD by contacting the surface with a stream containing C2H4, SiH4, and CO2 with an C2H4/SiH4 ratio of less than or equal to 3.3 by volume, at a temperature of between 600° C. and 680° C.; (ii) forming a SiO2 layer or a carbon-poor silicon oxycarbide layer with a mean C/Si ratio of less than 0.2 on the carbon-rich SiOxCy layer, thereby obtaining a layered substrate; (iii) annealing and/or shaping the layered substrate at a temperature of between 580° C. and 700° C.; (iv) activating the SiO2 layer or the carbon-poor silicon oxycarbide layer by plasma treatment or acidic or basic chemical treatment; and (v) grafting, by covalent bonding, a fluorinated hydrophobic agent to the surface of the SiO2 layer or the carbon-poor silicon oxycarbide layer.
    Type: Grant
    Filed: November 14, 2012
    Date of Patent: June 9, 2015
    Assignee: SAINT-GOBAIN GLASS FRANCE
    Inventors: Claire Thoumazet, Martin Melcher, Arnaud Huignard, Raphael Lante
  • Patent number: 9012024
    Abstract: The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal and a transparent layer made of silicon oxycarbide (SiOxCy) having a total thickness E with (a) a carbon-rich deep zone, extending from a depth P3 to a depth P4, where the C/Si atomic ratio is greater than or equal to 0.5, and (b) a carbon-poor surface zone, extending from a depth P1 to a depth P2, where the C/Si atomic ratio is less than or equal to 0.4, with P1<P2<P3<P4 and (P2?P1)+(P4?P3)<E the distance between P1 and P2 representing from 10% to 70% of the total thickness E of the silicon oxycarbide layer and the distance between P3 and P4 representing from 10% to 70% of the total thickness E of the silicon oxycarbide layer.
    Type: Grant
    Filed: November 14, 2012
    Date of Patent: April 21, 2015
    Assignee: Saint-Gobain Glass France
    Inventors: Claire Thoumazet, Martin Melcher, Arnaud Huignard, Raphael Lante
  • Publication number: 20140349107
    Abstract: The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal and a transparent layer mad of silicon oxycarbide (SiOxCy) having a total thickness E with (a) a carbon-rich deep zone, extending from a depth P3 to a depth P4, where the C/Si atomic ratio is greater than or equal to 0.5, and (b) a carbon-poor surface zone, extending from a depth P1 to a depth P2, where the C/Si atomic ratio is less than or equal to 0.4, with P1<P2<P3<P4 and (P2-P1)+(P4-P3)<E the distance between P1 and P2 representing from 10% to 70% of the total thickness E of the silicon oxycarbide layer and the distance between P3 and P4 representing from 10% to 70% of the total thickness E of the silicon oxycarbide layer.
    Type: Application
    Filed: November 14, 2012
    Publication date: November 27, 2014
    Applicant: SAINT-GOBAIN GLASS FRANCE
    Inventors: Claire Thoumazet, Martin Melcher, Arnaud Huignard, Raphael Lante
  • Publication number: 20140315027
    Abstract: The invention relates to a process for the manufacture of a hydrophobic glazing comprising the following successive stages: (a) formation of a carbon-rich silicon oxycarbide (SiOxCy) layer at the surface of a substrate made of mineral glass by chemical vapor deposition (CVD) over at least a portion of the surface of said substrate by bringing said surface into contact with a stream of reactive gases comprising ethylene (C2H4), silane (SiH4) and carbon dioxide (CO2) at a temperature of between 600° C. and 680° C., the ethylene/silane (C2H4/SiH4) ratio by volume during stage (a) being less than or equal to 3.3, (b) formation of an SiO2 layer on the silicon oxycarbide layer deposited in stage (a) or (b?) formation of a carbon-poor silicon oxycarbide layer exhibiting a mean C/Si ratio of less than 0.2, (c) annealing and/or shaping the substrate obtained on conclusion of stage (b) or (b?) at a temperature of between 580° C. and 700° C.
    Type: Application
    Filed: November 14, 2012
    Publication date: October 23, 2014
    Applicant: SAINT-GOBAIN GLASS FRANCE
    Inventors: Claire Thoumazet, Martin Melcher, Arnaud Huignard, Raphael Lante