Patents by Inventor Raphael ROCHAT

Raphael ROCHAT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DEPOSITION OF RUTHENIUM-CONTAINING FILMS BY NON-AROMATIZABLE CYCLIC-DIENE RUTHENIUM(0) COMPLEXES
    Publication number: 20240425974
    Abstract: Disclosed are chemicals suitable for use as a volatile precursor for vapor phase depositions of Ru containing materials, the chemical represented by the formula (NACD)-Ru-Lx, where x=1-3 and NACD is a non-aromatizable cyclic diene.
    Type: Application
    Filed: June 14, 2023
    Publication date: December 26, 2024
    Inventors: Jacky Chun Ho YIM, Yuki ITO, Teruo BEPPU, Raphael ROCHAT
  • Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films
    Patent number: 12173403
    Abstract: Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.
    Type: Grant
    Filed: April 30, 2021
    Date of Patent: December 24, 2024
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Rocio Alejandra Arteaga Muller, Raphael Rochat, Antonio Sanchez, Jean-Marc Girard, Nicolas Blasco, Santiago Marques-Gonzalez, Clément Lansalot-Matras, Jooho Lee, Zhiwen Wan
  • STABLE BIS(ALKYL-ARENE) TRANSITION METAL COMPLEXES AND METHODS OF FILM DEPOSITION USING THE SAME
    Publication number: 20220372053
    Abstract: Disclosed is a method for forming a metal-containing film on a substrate comprises the steps of: exposing the substrate to a vapor of a film forming composition that contains a metal-containing precursor; and depositing at least part of the metal-containing precursor onto the substrate to form the metal-containing film on the substrate through a vapor deposition process, wherein the metal-containing precursor is a pure M(alkyl-arene)2, wherein M is Cr, Mo, or W; arene is wherein R1, R2, R3, R4, R5 and R6 each is independently selected from H, C1-C6 alkyl, C1-C6 alkenyl, C1-C6 alkylphenyl, C1-C6 alkenylphenyl, or —SiXR7R8, wherein X is selected from F, Cl, Br, I, and R7, R8 each are selected from H, C1-C6 alkyl, C1-C6 alkenyl.
    Type: Application
    Filed: May 21, 2021
    Publication date: November 24, 2022
    Inventors: Rocio Alejandra ARTEAGA MULLER, Raphael ROCHAT, Julien GATINEAU, Teruo BEPPU, Bo PENG
  • Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof
    Patent number: 11205573
    Abstract: To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: December 21, 2021
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Rocio Alejandra Arteaga Muller, Nicolas Blasco, Jean-Marc Girard, Changhee Ko, Antonio Sanchez, Raphael Rochat
  • GROUP 6 TRANSITION METAL-CONTAINING COMPOSITIONS FOR VAPOR DEPOSITION OF GROUP 6 TRANSITION METAL-CONTAINING FILMS
    Publication number: 20210246553
    Abstract: Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.
    Type: Application
    Filed: April 30, 2021
    Publication date: August 12, 2021
    Inventors: Rocio ARTEAGA, Raphael Rochat, Antonio Sanchez, Jean-Marc Girard, Nicolas Blasco, Santiago Marques-Gonzalez, Clément Lansalot-Matras, Jooho Lee, Zhiwen Wan
  • Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films
    Patent number: 11021793
    Abstract: Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: June 1, 2021
    Assignee: L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude
    Inventors: Rocio Arteaga, Raphael Rochat, Antonio Sanchez, Jean-Marc Girard, Nicolas Blasco, Santiago Marques-Gonzalez, Clément Lansalot-Matras, Jooho Lee, Zhiwen Wan
  • CYCLIC GERMANIUM SILYLAMIDO PRECURSORS FOR GE-CONTAINING FILM DEPOSITIONS AND METHODS OF USING THE SAME
    Publication number: 20210032275
    Abstract: Methods for forming a Ge-containing film on a substrate comprise the steps of introducing a vapor of a cyclic Ge(II) silylamido precursor into a reactor having the substrate disposed therein and depositing at least part of the cyclic Ge(II) silylamido precursor onto the substrate to form the Ge-containing film using a vapor deposition method. The cyclic Ge(II) silylamido precursor is [SiMe3-(N—)—SiMe2-(N—)—SiMe3]Ge(II) or [tBu-(N—)—SiMe2-(N—)-tBu]Ge(II).
    Type: Application
    Filed: July 30, 2020
    Publication date: February 4, 2021
    Inventors: Naohisa NAKAGAWA, Jean-Marc GIRARD, Raphael ROCHAT, Takio KIZU, Jonathan MA, Vitaly NESTEROV
  • Ge-CONTAINING Co-FILM FORMING MATERIAL, Ge-CONTAINING Co FILM AND FILM FORMING METHOD THEREOF
    Publication number: 20200234960
    Abstract: To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge.
    Type: Application
    Filed: August 2, 2018
    Publication date: July 23, 2020
    Inventors: Rocio ARTEAGA, Nicolas BLASCO, Jean-Marc GIRARD, Changhee KO, Antonio SANCHEZ, Raphael ROCHAT
  • GROUP 6 TRANSITION METAL-CONTAINING COMPOSITIONS FOR VAPOR DEPOSITION OF GROUP 6 TRANSITION METAL-CONTAINING FILMS
    Publication number: 20190368039
    Abstract: Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.
    Type: Application
    Filed: May 31, 2018
    Publication date: December 5, 2019
    Inventors: Rocio ARTEAGA, Raphael ROCHAT, Antonio SANCHEZ, Jean-Marc GIRARD, Nicolas BLASCO, Santiago MARQUES-GONZALEZ, Clément LANSALOT-MATRAS, Jooho LEE, Zhiwen WAN