Abstract: Disclosed are a liner assembly for vacuum treatment apparatuses and a vacuum treatment apparatus, wherein the liner assembly for vacuum treatment apparatuses comprises: an annular liner including a sidewall protection ring and a support ring which are interconnected, the outer diameter of the support ring being greater than that of the sidewall protection ring, the annular liner enclosing a treating space; and a gas channel provided in the support ring, the gas channel communicating with the treating space. The liner assembly for vacuum treatment apparatuses offer an improved performance.

Abstract: Disclosed are a corrosion-resistant gas delivery assembly and a plasma processing apparatus. An inlet gas delivery component and a gas diffusion component are combined correspondingly with an inlet gas accommodation hole and a diffusion accommodation space that are arranged in a liner body, to form a multi-component structural configuration, which avoids direct contact of the process gas with the liner body due to liner body surface defects caused by high temperature. The advantages as offered include: effectively preventing the process gas from corroding a gas delivery assembly and the plasma processing apparatus, and solving the problems such as metal contamination and solid particle contamination in the reaction chamber caused by the corrosive fraction in the process gas; besides, the multi-component structural configuration facilitates routine maintenance.

Abstract: The present invention relates to a dual-station vacuum processor that pumps uniformly, comprising two vacuum processing chambers that may act as a process processing chamber, and an offset-pumping port and a vacuum pump which are common to and communicate with the two vacuum processing chambers, wherein a damper having a set thickness in a vertical direction is provided in a region proximal to the offset-pumping port in each vacuum processing chamber, so as to lower a pumping rate of gas at the pumping port proximal end and balance the pumping rate with the pumping rate of the gas at the pumping port distal end, thereby ameliorating the impact of chamber offset on the uniformity process processing. The present invention may further provide, in a rib as the damper, a channel in communication with the atmospheric environment outside of the chamber, so as to facilitate connection between a cable pipeline in the chamber and the outside.

Abstract: Embodiments of the present disclosure disclose a plasma process apparatus with low particle contamination and a method of operating the same, wherein the plasma process apparatus comprises a chamber body and a liner, wherein a dielectric window is provided above the liner; the chamber body, the liner, and the dielectric window enclose a reaction space; a base for placing a wafer is provided at a bottom portion inside the reaction space; a vacuum pump device for pumping a gas out of the reaction space and maintaining a low pressure therein is provided below the base; a shutter for shuttering between an opening on a chamber body sidewall and an opening on a liner sidewall is provided inside the chamber body, for blocking contamination particles in the gas from flowing from a transfer module to the reaction space; a groove is provided at a lower portion of the liner, wherein a flowing space enclosed by a liner outer wall below the shutter and a chamber body inner wall is in communication with an inner space of t

Abstract: Disclosed is a corrosion-resistant structure for a gas delivery system in a plasma processing apparatus. By providing a plating layer of corrosion-resistant material at the parts including the gas channel to avoid reacting with the delivered corrosive gas, metal and particle contaminations are reduced. By reversely mounting nozzles such that they reliably cover the plating layer inside the gas outlet holes, the disclosure prevents the corrosion-resistant material from being damaged by the plasma generated inside the cavity. By forming a corrosion-resistant yttrium oxide coating at the surfaces of the nozzles exposed to the cavity, the disclosure prevents the plasma from eroding the nozzles. The disclosure further leverages a flexible corrosion-resistant material, such as Teflon, to the sealing surfaces of the liner in contact with the dielectric window and the cavity, which improves the overall sealing effect of the liner.

Abstract: Disclosed are a bottom electrode assembly, a plasma processing apparatus, and a method of replacing a focus ring, wherein the bottom electrode assembly comprises: a base for supporting a wafer to be processed; a focus ring provided surrounding the outer periphery of the base; a cover ring disposed beneath the focus ring, a plurality of recesses being arranged along the circumferential direction of the cover ring; moving blocks provided in the recesses, an inner top corner of each moving block being provided with a step, the step being configured to support part of the focus ring; and a drive device connected to the moving blocks to activate the moving blocks to drive the focus ring to move up and down. With the bottom electrode assembly, replacement of the focus ring can be performed without opening the process chamber.

Abstract: Method for multi-zone temperature control system having temperature control matrix and gate driver; N*M temperature control modules form N-row M-column matrix, power supply line, and power return line; each temperature control module comprising: a temperature control unit adapts to be heated up by electrical power for temperature controlling; semiconductor switch provided with a gate electrode connected with the gate driver, two ends of the gate being connected with the power supply line, and the power return line through the temperature control unit, respectively. In the temperature control matrix, one ends, which are connected with a power return line, of the temperature control units of temperature control modules in a same row or same column are serially connected, and connected with the power supply line; one ends, which are connected with the power supply line at same row or same column are serially connected, and connected with the power supply line.

Abstract: Disclosed are a corrosion-resistant gas delivery assembly and a plasma processing apparatus. An inlet gas delivery component and a gas diffusion component are combined correspondingly with an inlet gas accommodation hole and a diffusion accommodation space that are arranged in a liner body, to form a multi-component structural configuration, which avoids direct contact of the process gas with the liner body due to liner body surface defects caused by high temperature. The advantages as offered include: effectively preventing the process gas from corroding a gas delivery assembly and the plasma processing apparatus, and solving the problems such as metal contamination and solid particle contamination in the reaction chamber caused by the corrosive fraction in the process gas; besides, the multi-component structural configuration facilitates routine maintenance.

Abstract: Disclosed are a liner assembly for vacuum treatment apparatuses and a vacuum treatment apparatus, wherein the liner assembly for vacuum treatment apparatuses comprises: an annular liner including a sidewall protection ring and a support ring which are interconnected, the outer diameter of the support ring being greater than that of the sidewall protection ring, the annular liner enclosing a treating space; and a gas channel provided in the support ring, the gas channel communicating with the treating space. The liner assembly for vacuum treatment apparatuses offer an improved performance.

Abstract: Disclosed is a corrosion-resistant structure for a gas delivery system in a plasma processing apparatus. By providing a plating layer of corrosion-resistant material at the parts including the gas channel to avoid reacting with the delivered corrosive gas, metal and particle contaminations are reduced. By reversely mounting nozzles such that they reliably cover the plating layer inside the gas outlet holes, the disclosure prevents the corrosion-resistant material from being damaged by the plasma generated inside the cavity. By forming a corrosion-resistant yttrium oxide coating at the surfaces of the nozzles exposed to the cavity, the disclosure prevents the plasma from eroding the nozzles. The disclosure further leverages a flexible corrosion-resistant material, such as Teflon, to the sealing surfaces of the liner in contact with the dielectric window and the cavity, which improves the overall sealing effect of the liner.

Abstract: Embodiments of the present disclosure disclose a plasma process apparatus with low particle contamination and a method of operating the same, wherein the plasma process apparatus comprises a chamber body and a liner, wherein a dielectric window is provided above the liner; the chamber body, the liner, and the dielectric window enclose a reaction space; a base for placing a wafer is provided at a bottom portion inside the reaction space; a vacuum pump device for pumping a gas out of the reaction space and maintaining a low pressure therein is provided below the base; a shutter for shuttering between an opening on a chamber body sidewall and an opening on a liner sidewall is provided inside the chamber body, for blocking contamination particles in the gas from flowing from a transfer module to the reaction space; a groove is provided at a lower portion of the liner, wherein a flowing space enclosed by a liner outer wall below the shutter and a chamber body inner wall is in communication with an inner space of t

Abstract: The present invention relates to a dual-station vacuum processor that pumps uniformly, comprising two vacuum processing chambers that may act as a process processing chamber, and an offset-pumping port and a vacuum pump which are common to and communicate with the two vacuum processing chambers, wherein a damper having a set thickness in a vertical direction is provided in a region proximal to the offset-pumping port in each vacuum processing chamber, so as to lower a pumping rate of gas at the pumping port proximal end and balance the pumping rate with the pumping rate of the gas at the pumping port distal end, thereby ameliorating the impact of chamber offset on the uniformity process processing. The present invention may further provide, in a rib as the damper, a channel in communication with the atmospheric environment outside of the chamber, so as to facilitate connection between a cable pipeline in the chamber and the outside.

Abstract: The invention relates to an electrode structure for ICP etcher, including: inductive coils, inductive coil connectors, connect rods and sleeve; in which, inductive coils are set on insulation window and insulation window is set on chamber lid; two ends of the connect rods respectively connect inductive coils and inductive coil connectors; the sleeve is made of conductive material and grounded; first end of the sleeve is covered by a cap while the second is opening; the cap has holes, and the connect rods are set pass through the holes and isolated from the cap; the opening of sleeve is set toward inductive coils, and the inductive coils are shielded inside the sleeve. This invention shields electromagnetic field generated by inductive coil connectors outside the sleeve to avoid influence of even electromagnetic field generated to inductive coils, and guarantee even etching.

Abstract: The present invention discloses a multi-zone active-matrix temperature control system, the control system having a temperature control matrix and a gate driver; the temperature control matrix comprising: N*M temperature control modules forming a N-row M-column matrix, a power supply line, and a power return line; each temperature control module comprising: a temperature control unit adapts to be heated up by electrical power for temperature controlling; a semiconductor switch provided with a gate electrode connected with the gate driver, two ends of the gate, which turn on or off, being connected with the power supply line, and with the power return line through the temperature control unit, respectively.