Abstract: A hybrid Micro-Electro-Mechanical-System-Floating-Gate (MEMS-FG) device includes an electrically isolated non-volatile memory (floating) structure including a polysilicon gate structure connected by a metal via to a fixed electrode, where the polysilicon gate structure also forms the gate of an NVM cell, and the fixed electrode forms part of a lever-type or membrane-type ohmic MEMS switch. An initial charge is written before each sensing operation onto the floating structure by way of the NVM cell. During each sensing operation, sensor data is effectively written directly onto the NVM cell by way of either maintaining or discharging the initial charge, where discharge of the initial charge occurs when a predetermined event (e.g., contact by a fingerprint ridge) produces an actuating force that biases a movable electrode of the MEMS switch against the fixed electrode. The sensor data is read out from the NVM cell after each sensing operation.

Abstract: A hybrid Micro-Electro-Mechanical-System-Floating-Gate (MEMS-FG) device includes an electrically isolated non-volatile memory (floating) structure including a polysilicon gate structure connected by a metal via to a fixed electrode, where the polysilicon gate structure also forms the gate of an NVM cell, and the fixed electrode forms part of a lever-type or membrane-type ohmic MEMS switch. An initial charge is written before each sensing operation onto the floating structure by way of the NVM cell. During each sensing operation, sensor data is effectively written directly onto the NVM cell by way of either maintaining or discharging the initial charge, where discharge of the initial charge occurs when a predetermined event (e.g., contact by a fingerprint ridge) produces an actuating force that biases a movable electrode of the MEMS switch against the fixed electrode. The sensor data is read out from the NVM cell after each sensing operation.

Abstract: A solid-state fingerprint sensor including an array of pixels, each pixel including an electrically isolated NVM structure, a security NVM cell and a normally-open MEMS switch. The electrically isolated NVM structure includes a polycrystalline silicon gate structure connected by a metal via structure to a fixed electrode that forms part of the MEMS switch. Initial charges stored on the electrically isolated NVM structures before each sensing operation are discharged to ground by the MEMS switch when a fingerprint ridge is aligned with the pixel and produces an applied actuating force on the MEMs switch. Final pixel charge values (i.e., either the initial charge or no charge) stored on each electrically isolated NVM structure after each sensing operation are encrypted using security bits stored on the security NVM cells such that only encrypted image data is transmitted from the pixels to external circuitry.

Abstract: An RF SOI switch includes patterned or self-aligned low-k features (i.e., low-k polymer structures or voids) in the PMD and/or subsequently formed inter-metal dielectric layers to reduce capacitive coupling. All portions of the dielectric layers through which metal contact/via structures pass are pre-designated as reserved regions, and formation of the low-k features is restricted to interstitial regions located between adjacent reserved regions. After the low-k features are formed, dielectric material is deposited into all reserved regions, and then the metal contact/via structures are formed according to standard practices through the dielectric material disposed in the reserved regions. The low-k features are formed by polymer material sandwiched between two passivation layers. Optional openings are formed through the upper passivation layer, and then the polymer material is asked out to generate void-type features.

Abstract: Synchronization of oscillators based on anharmonic nanoelectromechanical resonators. Experimental implimentation allows for unprecedented observation and control of parameters governing the dynamics of synchronization. Close quantitative agreement is found between experimental data and theory describing reactively coupled Duffing resonators with fully saturated feedback gain. In the synchonized state, a significant reduction in the phase noise of the oscillators is demonstrated, which is key for applications such as sensors and clocks. Oscillator networks constructed from nanomechanical resonators form an important laboratory to commercialize and study synchronization—given their high-quality factors, small footprint, and ease of co-integration with modern electronic signal processing technologies. Networks can be made including one-, two-, and three-dimensional networks. Triangular and square lattices can be made.

Abstract: A passive electro-mechanical device that reduces phase noise in oscillators, thereby improving their frequency precision. The noise reduction device can consist of a pair of coupled nonlinear resonators that are driven parametrically—by modulating their natural frequency in time, through the output signal of a conventional oscillator at a frequency close to the sum of the linear mode frequencies. Above the threshold for parametric response, the coupled resonators can exhibit oscillation at an inherent frequency. The novel possibility for noise elimination is realized by tuning the system to operating points for which this periodic signal is immune to frequency noise in the drive signal, providing a way to clean the phase noise of the driving oscillator.

Abstract: A passive electro-mechanical device that reduces phase noise in oscillators, thereby improving their frequency precision. The noise reduction device can consist of a pair of coupled nonlinear resonators that are driven parametrically—by modulating their natural frequency in time, through the output signal of a conventional oscillator at a frequency close to the sum of the linear mode frequencies. Above the threshold for parametric response, the coupled resonators can exhibit oscillation at an inherent frequency. The novel possibility for noise elimination is realized by tuning the system to operating points for which this periodic signal is immune to frequency noise in the drive signal, providing a way to clean the phase noise of the driving oscillator.

Abstract: Synchronization of oscillators based on anharmonic nanoelectromechanical resonators. Experimental implimentation allows for unprecedented observation and control of parameters governing the dynamics of synchronization. Close quantitative agreement is found between experimental data and theory describing reactively coupled Duffing resonators with fully saturated feedback gain. In the synchonized state, a significant reduction in the phase noise of the oscillators is demonstrated, which is key for applications such as sensors and clocks. Oscillator networks constructed from nanomechanical resonators form an important laboratory to commercialize and study synchronization—given their high-quality factors, small footprint, and ease of co-integration with modern electronic signal processing technologies. Networks can be made including one-, two-, and three-dimensional networks. Triangular and square lattices can be made.

Abstract: A parametric feedback oscillator includes a resonator which has at least one transduction element and at least one electromechanical resonating element. The resonator is configured to accept as input a parametric excitation signal at a frequency 2?0 and to provide a resonating output signal at a frequency ?0. A cascaded feedback path in any electrically coupled cascade order includes at least one non-linear element, at least one phase shifter electrically, and at least one amplifier. The cascade feedback path is configured to receive as input the resonating output signal at a frequency ?0 and configured to provide as output a feedback path signal as the parametric excitation signal at a frequency 2?0 to the resonator. A parametric feedback oscillator output terminal is configured to provide the resonating output signal at the frequency ?0 as an output signal. A method of causing a parametric feedback oscillation is also described.

Abstract: A parametric feedback oscillator includes a resonator which has at least one transduction element and at least one electromechanical resonating element. The resonator is configured to accept as input a parametric excitation signal at a frequency 2?0 and to provide a resonating output signal at a frequency ?0. A cascaded feedback path in any electrically coupled cascade order includes at least one non-linear element, at least one phase shifter electrically, and at least one amplifier. The cascade feedback path is configured to receive as input the resonating output signal at a frequency ?0 and configured to provide as output a feedback path signal as the parametric excitation signal at a frequency 2?0 to the resonator. A parametric feedback oscillator output terminal is configured to provide the resonating output signal at the frequency ?0 as an output signal. A method of causing a parametric feedback oscillation is also described.