Abstract: A pyroelectric sensor having an active regulation for maximizing pyroelectric sensor sensitivity is disclosed. The pyroelectric sensor comprises a ferroelectric transducer, and a regulator. The ferroelectric transducer may either be a homogenous ferroelectric transducer, a compositionally graded ferroelectric transducer, or an externally graded ferroelectric transducer. The regulator may either be an excitation regulator or a temperature regulator. A method for regulating the excitation or the temperature of a pyroelectric sensor for maximizing sensitivity of the pyroelectric sensor is also disclosed.

Abstract: Hydrogen gas sensors employ an epitaxial layer of the thermodynamically stable form of aluminum nitride (AlN) as the “insulator” in an MIS structure having a thin metal gate electrode suitable for catalytic dissociate of hydrogen, such as palladium, on a semiconductor substrate. The AlN is deposited by a low temperature technique known as Plasma Source Molecular Beam Epitaxy (PSMBE). When silicon (Si) is used the semiconducting substrate, the electrical behavior of the device is that of a normal nonlinear MIS capacitor. When a silicon carbide (SiC) is used, the electrical behavior of the device is that of a rectifying diode. Preferred structures are Pd/AlN/Si and Pd/AlN/SiC wherein the SiC is preferably 6H—SiC.

Abstract: Hydrogen gas sensors employ an epitaxial layer of the thermodynamically stable form of aluminum nitride (AlN) as the “insulator” in an MIS structure having a thin metal gate electrode suitable for catalytic dissociate of hydrogen, such as palladium, on a semiconductor substrate. The AlN is deposited by a low temperature technique known as Plasma Source Molecular Beam Epitaxy (PSMBE). When silicon (Si) is used the semiconducting substrate, the electrical behavior of the device is that of a normal nonlinear MIS capacitor. When a silicon carbide (SiC) is used, the electrical behavior of the device is that of a rectifying diode. Preferred structures are Pd/AlN/Si and Pd/AlN/SiC wherein the SiC is preferably 6H—SiC.

Abstract: A self-assembled nanobump array structure including a semi-absorbing outer layer provided on at least one nanobump-forming substrate layer, the semi-absorbing outer layer configured to ablate slowly to allow an applied laser energy to be transmitted to the at least one nanobump-forming substrate layer, in which the self-assembled nanobump array structure is formed by an energy and a pressure buildup occurring in the at least one nanobump-forming substrate layer.

Abstract: A self-assembled nanobump array structure including a semi-absorbing outer layer provided on at least one nanobump-forming substrate layer, the semi-absorbing outer layer configured to ablate slowly to allow an applied laser energy to be transmitted to the at least one nanobump-forming substrate layer, in which the self-assembled nanobump array structure is formed by an energy and a pressure buildup occurring in the at least one nanobump-forming substrate layer.

Abstract: A pyroelectric sensor having an active regulation for maximizing pyroelectric sensor sensitivity is disclosed. The pyroelectric sensor comprises a ferroelectric transducer, and a regulator. The ferroelectric transducer may either be a homogenous ferroelectric transducer, a compositionally graded ferroelectric transducer, or an externally graded ferroelectric transducer. The regulator may either be an excitation regulator or a temperature regulator. A method for regulating the excitation or the temperature of a pyroelectric sensor for maximizing sensitivity of the pyroelectric sensor is also disclosed.