Abstract: The specification describes of multilevel printed circuit boards and a process for their manufacture in which capacitors and other passive components are buried between levels of the multilevel board. The capacitor in the multilevel structure is designed so that access is conveniently provided to connect from the parallel plate electrodes of the interlevel capacitor to the board surface or to another board level using plated through hole interconnects.

Abstract: A thin film capacitor for use in semiconductor integrated circuit devices such as analog circuits, rf circuits, and dynamic random access memories (DRAMs), and a method for its fabrication, is disclosed. The capacitor has a dielectric thickness less than about 50 nm, a capacitance density of at least about 15 fF/.mu.m.sup.2, and a breakdown field of at least about 1 MV/cm. The dielectric material is a metal oxide of either titanium, niobium, or tantalum. The metal oxide can also contain silicon or nitrogen. The dielectric material is formed over a first electrode by depositing the metal onto the substrate or onto a first electrode formed on the substrate. The metal is then anodically oxidized to form the dielectric material of the desired thickness. A top electrode is then formed over the dielectric layer. The top electrode is a metal that does not degrade the electrical characteristics (e.g. the leakage current or the breakdown voltage) of the dielectric layer.

Abstract: In accordance with the invention, a thin film capacitor including a dielectric of nitrogen or silicon-doped tantalum oxide and at least one electrode including chromium. Preferably the capacitor is fabricated by anodically oxidizing TaN.sub.x or Ta.sub.2 Si and forming a Cr counterelectrode. The method is fully compatible with MCM processing. It produces anodic Ta.sub.2 O.sub.5 capacitors having exceptionally low leakage currents (<1 nA/cm.sup.2 at 10 V), high breakdown fields (>4 MV/cm) and high capacitance densities (70 nF/cm.sup.2). The devices are stable at 350.degree. C. with excellent capacitor properties and are particularly useful as thin film capacitors of large area (>1 mm.sup.2).