Patents by Inventor Ratnakar Vispute

Ratnakar Vispute has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7132668
    Abstract: Photoconductive devices (1,2) comprising MgxZn1?xO, that is preferably epitaxially deposited on a substrate (21), optionally also including a buffer layer (22), wherein x has a value such that the layer is sensitive to UV light. The a MgZnO device (2) having predetermined electrical and optical properties and first and second electrodes (3) deposited on a surface of the device, the second electrode being spaced from the first electrode. A voltage source (4) is connected across the first and second electrodes to create an electric field within the device. In operation, when the surface of the device upon which the electrodes are deposited is subjected to a photon emission, electron-hole pairs are created within the device and flow within the device because of the electric field.
    Type: Grant
    Filed: June 26, 2001
    Date of Patent: November 7, 2006
    Assignee: University of Maryland
    Inventors: Ratnakar Vispute, Thirumalai Venkatesan, Wei Yang, Supab Choopun
  • Publication number: 20060115588
    Abstract: A system and method are provided to fabricate thin-films having different physical property parameters or having physical property parameters that continuously change across functionally broadband monolithic device arrays. The fabrication method deposits the thin-film including layers on a substrate of a monolithic chip. The method defines a desired gradient profile of each layer forming the thin-film, each gradient profile including a desired thinnest profile and a desired thickest profile. The method further aligns an aperture of a mask over the substrate to form the thin-film and calculates a shutter speed for the specified gradient profile of each layer across the desired area of the substrate, and deposits each layer on the substrate, through the aperture, as the aperture of the shutter moves at the calculated shutter speed from the desired thinnest profile of each layer to the desired thickest profile of each layer.
    Type: Application
    Filed: November 29, 2004
    Publication date: June 1, 2006
    Inventors: Ichiro Takeuchi, Wei Yang, Kao-Shuo Chang, Ratnakar Vispute, Thirumalai Venkatesan
  • Publication number: 20030160176
    Abstract: Photoconductive devices (1,2) comprising MgxZn1-xO, that is preferably epitaxially deposited on a substrate (21), optionally also including a buffer layer (22), wherein x has a value such that the layer is sensitive to UV light. The a MgZnO device (2) having predetermined electrical and optical properties and first and second electrodes (3) deposited on a surface of the device, the second electrode being spaced from the first electrode. A voltage source (4) is connected across the first and second electrodes to create an electric field within the device. In operation, when the surface of the device upon which the electrodes are deposited is subjected to a photon emission, electron-hole pairs are created within the device and flow within the device because of the electric field.
    Type: Application
    Filed: February 20, 2003
    Publication date: August 28, 2003
    Inventors: Ratnakar Vispute, Thirumalai Venkatesan, Wei Yang, Supab Choopun