Patents by Inventor Ratnam Sooriyakumaran
Ratnam Sooriyakumaran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6939664Abstract: Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.Type: GrantFiled: October 24, 2003Date of Patent: September 6, 2005Assignee: International Business Machines CorporationInventors: Wu-Song Huang, Robert D. Allen, Marie Angelopoulos, Ranee W. Kwong, Ratnam Sooriyakumaran
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Patent number: 6927015Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.Type: GrantFiled: August 18, 2004Date of Patent: August 9, 2005Assignee: International Business Machines CorporationInventors: Mahmoud M. Khojasteh, Timothy M. Hughes, Ranee W. Kwong, Pushkara Rao Varanasi, William R. Brunsvold, Margaret C. Lawson, Robert D. Allen, David R. Medeiros, Ratnam Sooriyakumaran, Phillip Brock
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Publication number: 20050124774Abstract: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C.Type: ApplicationFiled: December 4, 2003Publication date: June 9, 2005Inventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard Dipietro, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
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Publication number: 20050123852Abstract: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C.Type: ApplicationFiled: December 4, 2003Publication date: June 9, 2005Inventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
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Publication number: 20050112382Abstract: A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C, and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.Type: ApplicationFiled: November 24, 2003Publication date: May 26, 2005Inventors: Robert Allen, Wu-Song Huang, Mahmoud Khojasteh, Qinghuang Lin, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa Truong
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Publication number: 20050106494Abstract: Inventive silsesquioxane polymers are provided, and photoresist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting cyclic ketal acid-labile moieties that have low activation energy for acid-catalyzed cleaving. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such photoresist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.Type: ApplicationFiled: November 19, 2003Publication date: May 19, 2005Applicant: International Business Machines CorporationInventors: Wu-Song Huang, Robert Allen, Marie Angelopoulos, Ranee Kwong, Ratnam Sooriyakumaran
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Publication number: 20050089792Abstract: Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.Type: ApplicationFiled: October 24, 2003Publication date: April 28, 2005Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Wu-Song Huang, Robert Allen, Marie Angelopoulos, Ranee Kwong, Ratnam Sooriyakumaran
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Publication number: 20050019704Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.Type: ApplicationFiled: August 18, 2004Publication date: January 27, 2005Inventors: Mahmoud Khojasteh, Timothy Hughes, Ranee Kwong, Pushkara Varanasi, William Brunsvold, Margaret Lawson, Robert Allen, David Medeiros, Ratnam Sooriyakumaran, Phillip Brock
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Publication number: 20050019696Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl(CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl(CH3), trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl(CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.Type: ApplicationFiled: August 12, 2004Publication date: January 27, 2005Applicant: International Business Machines CorporationInventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, Debra Fenzel-Alexander, Carl Larson, David Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
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Patent number: 6818381Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.Type: GrantFiled: December 21, 2001Date of Patent: November 16, 2004Assignee: International Business Machines CorporationInventors: Mahmoud M. Khojasteh, Timothy M. Hughes, Ranee W. Kwong, Pushkara Rao Varanasi, William R. Brunsvold, Margaret C. Lawson, Robert D. Allen, David R. Medeiros, Ratnam Sooriyakumaran, Phillip Brock
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Patent number: 6806026Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.Type: GrantFiled: May 31, 2002Date of Patent: October 19, 2004Assignee: International Business Machines CorporationInventors: Robert David Allen, Gregory Breyta, Phillip Brock, Richard A. DiPietro, Debra Fenzel-Alexander, Carl Larson, David R. Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa D. Truong, Gregory M. Wallraff
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Patent number: 6794459Abstract: The present invention relates to cyclic polymers and their use in photolithographic applications. The cyclic polymers contain a pendant acid labile functional group and a functional group containing a protected hydroxyl moiety. The polymers are post modified by deprotecting the pendant hydroxyl moiety and reacting the deprotected hydroxyl containing moiety with a coreactant. The post-functionalized polymers find application in chemically amplified photoresist compositions.Type: GrantFiled: August 21, 2002Date of Patent: September 21, 2004Assignees: Sumitomo Bakelite Co., Ltd., International Business Machines Corp.Inventors: Saikumar Jayaraman, George Martin Benedikt, Larry Funderburk Rhodes, Richard Vicari, Robert David Allen, Richard Anthony DiPietro, Ratnam Sooriyakumaran, Thomas Wallow
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Patent number: 6770419Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.Type: GrantFiled: September 11, 2002Date of Patent: August 3, 2004Assignee: International Business Machines CorporationInventors: Mahmoud M. Khojasteh, Ranee W. Kwong, Kuang-Jung Chen, Pushkara Rao Varanasi, Robert D. Allen, Phillip Brock, Frances Houle, Ratnam Sooriyakumaran
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Publication number: 20040137241Abstract: The present invention relates to ultra-large scale integrated (ULSI) interconnect structures, and more particularly to patternable low dielectric constant (low-k) materials suitable for use in ULSI interconnect structures. The patternable low-k dielectrics disclosed herein are functionalized polymers that having one or more acid-sensitive imageable functional groups.Type: ApplicationFiled: January 8, 2003Publication date: July 15, 2004Applicant: International Business Machines CorporationInventors: Qinghuang Lin, Ratnam Sooriyakumaran
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Patent number: 6730454Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.Type: GrantFiled: April 16, 2002Date of Patent: May 4, 2004Assignee: International Business Machines CorporationInventors: Dirk Pfeiffer, Marie Angelopoulos, Katherina Babich, Phillip Brock, Wu-Song Huang, Arpan P. Mahorowala, David R. Medeiros, Ratnam Sooriyakumaran
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Publication number: 20040048187Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.Type: ApplicationFiled: September 11, 2002Publication date: March 11, 2004Inventors: Mahmoud M. Khojasteh, Ranee W. Kwong, Kuang-Jung Chen, Pushkara Rao Varanasi, Robert D. Allen, Phillip Brock, Frances Houle, Ratnam Sooriyakumaran
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Publication number: 20030224283Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula 1Type: ApplicationFiled: May 31, 2002Publication date: December 4, 2003Applicant: International Business Machines CorporationInventors: Robert David Allen, Gregory Breyta, Phillip Brock, Richard A. DiPietro, Debra Fenzel-Alexander, Carl Larson, David R. Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa D. Truong, Gregory M. Wallraff
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Patent number: 6653048Abstract: Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.Type: GrantFiled: May 6, 2002Date of Patent: November 25, 2003Assignee: International Business Machines Corp.Inventors: Phillip Joe Brock, Richard Anthony DiPietro, Donald Clifford Hofer, Ratnam Sooriyakumaran, Gregory Michael Wallraff
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Publication number: 20030198877Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.Type: ApplicationFiled: April 16, 2002Publication date: October 23, 2003Applicant: International Business Machines CorporationInventors: Dirk Pfeiffer, Marie Angelopoulos, Katherina Babich, Phillip Brock, Wu-Song Huang, Arpan P. Mahorowala, David R. Medeiros, Ratnam Sooriyakumaran
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Patent number: RE38282Abstract: The invention relates to a process for forming bilayer resist images with a chemically-amplified, radiation-sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation-sensitive acid generator and a vinyl polymer having an acid-cleavable silylethoxy group and (ii) an organic underlayer. The bilayer resist is used in the manufacture of integrated circuits.Type: GrantFiled: June 28, 2001Date of Patent: October 21, 2003Assignee: International Business Machines CorporationInventors: Robert David Allen, Donald Clifford Hofer, Ratnam Sooriyakumaran, Gregory Michael Wallraff