Patents by Inventor Ratnam Sooriyakumaran

Ratnam Sooriyakumaran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6939664
    Abstract: Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
    Type: Grant
    Filed: October 24, 2003
    Date of Patent: September 6, 2005
    Assignee: International Business Machines Corporation
    Inventors: Wu-Song Huang, Robert D. Allen, Marie Angelopoulos, Ranee W. Kwong, Ratnam Sooriyakumaran
  • Patent number: 6927015
    Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.
    Type: Grant
    Filed: August 18, 2004
    Date of Patent: August 9, 2005
    Assignee: International Business Machines Corporation
    Inventors: Mahmoud M. Khojasteh, Timothy M. Hughes, Ranee W. Kwong, Pushkara Rao Varanasi, William R. Brunsvold, Margaret C. Lawson, Robert D. Allen, David R. Medeiros, Ratnam Sooriyakumaran, Phillip Brock
  • Publication number: 20050124774
    Abstract: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C.
    Type: Application
    Filed: December 4, 2003
    Publication date: June 9, 2005
    Inventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard Dipietro, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
  • Publication number: 20050123852
    Abstract: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C.
    Type: Application
    Filed: December 4, 2003
    Publication date: June 9, 2005
    Inventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
  • Publication number: 20050112382
    Abstract: A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C, and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.
    Type: Application
    Filed: November 24, 2003
    Publication date: May 26, 2005
    Inventors: Robert Allen, Wu-Song Huang, Mahmoud Khojasteh, Qinghuang Lin, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa Truong
  • Publication number: 20050106494
    Abstract: Inventive silsesquioxane polymers are provided, and photoresist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting cyclic ketal acid-labile moieties that have low activation energy for acid-catalyzed cleaving. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such photoresist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
    Type: Application
    Filed: November 19, 2003
    Publication date: May 19, 2005
    Applicant: International Business Machines Corporation
    Inventors: Wu-Song Huang, Robert Allen, Marie Angelopoulos, Ranee Kwong, Ratnam Sooriyakumaran
  • Publication number: 20050089792
    Abstract: Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
    Type: Application
    Filed: October 24, 2003
    Publication date: April 28, 2005
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Wu-Song Huang, Robert Allen, Marie Angelopoulos, Ranee Kwong, Ratnam Sooriyakumaran
  • Publication number: 20050019704
    Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.
    Type: Application
    Filed: August 18, 2004
    Publication date: January 27, 2005
    Inventors: Mahmoud Khojasteh, Timothy Hughes, Ranee Kwong, Pushkara Varanasi, William Brunsvold, Margaret Lawson, Robert Allen, David Medeiros, Ratnam Sooriyakumaran, Phillip Brock
  • Publication number: 20050019696
    Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl(CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl(CH3), trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl(CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
    Type: Application
    Filed: August 12, 2004
    Publication date: January 27, 2005
    Applicant: International Business Machines Corporation
    Inventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, Debra Fenzel-Alexander, Carl Larson, David Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
  • Patent number: 6818381
    Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.
    Type: Grant
    Filed: December 21, 2001
    Date of Patent: November 16, 2004
    Assignee: International Business Machines Corporation
    Inventors: Mahmoud M. Khojasteh, Timothy M. Hughes, Ranee W. Kwong, Pushkara Rao Varanasi, William R. Brunsvold, Margaret C. Lawson, Robert D. Allen, David R. Medeiros, Ratnam Sooriyakumaran, Phillip Brock
  • Patent number: 6806026
    Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
    Type: Grant
    Filed: May 31, 2002
    Date of Patent: October 19, 2004
    Assignee: International Business Machines Corporation
    Inventors: Robert David Allen, Gregory Breyta, Phillip Brock, Richard A. DiPietro, Debra Fenzel-Alexander, Carl Larson, David R. Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa D. Truong, Gregory M. Wallraff
  • Patent number: 6794459
    Abstract: The present invention relates to cyclic polymers and their use in photolithographic applications. The cyclic polymers contain a pendant acid labile functional group and a functional group containing a protected hydroxyl moiety. The polymers are post modified by deprotecting the pendant hydroxyl moiety and reacting the deprotected hydroxyl containing moiety with a coreactant. The post-functionalized polymers find application in chemically amplified photoresist compositions.
    Type: Grant
    Filed: August 21, 2002
    Date of Patent: September 21, 2004
    Assignees: Sumitomo Bakelite Co., Ltd., International Business Machines Corp.
    Inventors: Saikumar Jayaraman, George Martin Benedikt, Larry Funderburk Rhodes, Richard Vicari, Robert David Allen, Richard Anthony DiPietro, Ratnam Sooriyakumaran, Thomas Wallow
  • Patent number: 6770419
    Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.
    Type: Grant
    Filed: September 11, 2002
    Date of Patent: August 3, 2004
    Assignee: International Business Machines Corporation
    Inventors: Mahmoud M. Khojasteh, Ranee W. Kwong, Kuang-Jung Chen, Pushkara Rao Varanasi, Robert D. Allen, Phillip Brock, Frances Houle, Ratnam Sooriyakumaran
  • Publication number: 20040137241
    Abstract: The present invention relates to ultra-large scale integrated (ULSI) interconnect structures, and more particularly to patternable low dielectric constant (low-k) materials suitable for use in ULSI interconnect structures. The patternable low-k dielectrics disclosed herein are functionalized polymers that having one or more acid-sensitive imageable functional groups.
    Type: Application
    Filed: January 8, 2003
    Publication date: July 15, 2004
    Applicant: International Business Machines Corporation
    Inventors: Qinghuang Lin, Ratnam Sooriyakumaran
  • Patent number: 6730454
    Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.
    Type: Grant
    Filed: April 16, 2002
    Date of Patent: May 4, 2004
    Assignee: International Business Machines Corporation
    Inventors: Dirk Pfeiffer, Marie Angelopoulos, Katherina Babich, Phillip Brock, Wu-Song Huang, Arpan P. Mahorowala, David R. Medeiros, Ratnam Sooriyakumaran
  • Publication number: 20040048187
    Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.
    Type: Application
    Filed: September 11, 2002
    Publication date: March 11, 2004
    Inventors: Mahmoud M. Khojasteh, Ranee W. Kwong, Kuang-Jung Chen, Pushkara Rao Varanasi, Robert D. Allen, Phillip Brock, Frances Houle, Ratnam Sooriyakumaran
  • Publication number: 20030224283
    Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula 1
    Type: Application
    Filed: May 31, 2002
    Publication date: December 4, 2003
    Applicant: International Business Machines Corporation
    Inventors: Robert David Allen, Gregory Breyta, Phillip Brock, Richard A. DiPietro, Debra Fenzel-Alexander, Carl Larson, David R. Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa D. Truong, Gregory M. Wallraff
  • Patent number: 6653048
    Abstract: Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.
    Type: Grant
    Filed: May 6, 2002
    Date of Patent: November 25, 2003
    Assignee: International Business Machines Corp.
    Inventors: Phillip Joe Brock, Richard Anthony DiPietro, Donald Clifford Hofer, Ratnam Sooriyakumaran, Gregory Michael Wallraff
  • Publication number: 20030198877
    Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.
    Type: Application
    Filed: April 16, 2002
    Publication date: October 23, 2003
    Applicant: International Business Machines Corporation
    Inventors: Dirk Pfeiffer, Marie Angelopoulos, Katherina Babich, Phillip Brock, Wu-Song Huang, Arpan P. Mahorowala, David R. Medeiros, Ratnam Sooriyakumaran
  • Patent number: RE38282
    Abstract: The invention relates to a process for forming bilayer resist images with a chemically-amplified, radiation-sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation-sensitive acid generator and a vinyl polymer having an acid-cleavable silylethoxy group and (ii) an organic underlayer. The bilayer resist is used in the manufacture of integrated circuits.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: October 21, 2003
    Assignee: International Business Machines Corporation
    Inventors: Robert David Allen, Donald Clifford Hofer, Ratnam Sooriyakumaran, Gregory Michael Wallraff