Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.

Abstract: The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.

Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.

Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.

Abstract: The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.

Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.

Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.

Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.

Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.

Abstract: The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.

Abstract: Exemplary methods of semiconductor processing may include forming a first plasma of a silicon-containing precursor and an oxygen-containing precursor within a processing region of a semiconductor processing chamber. The methods may also include depositing a coating from first effluents of the first plasma on surfaces defining the processing region to a target thickness greater than or about 0.5 ?m. Forming the first plasma may occur at a first power greater than or about 300 W. The surfaces defining the processing region may include a surface of a faceplate that faces the processing region.

Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.

Abstract: A system and method for forming a film includes generating a plasma in a processing volume of a processing chamber to form the film on a substrate. The processing chamber may include a gas distributor configured to generate the plasma in the processing volume. Further, a barrier gas is provided into the processing volume to form a gas curtain around a plasma located in the processing volume. The barrier gas is supplied by a gas supply source through an inlet port disposed along a first side of the processing chamber. Further, an exhaust port is disposed along the first side of the processing chamber and the plasma and the barrier gas is purged via the exhaust port.

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming an interlayer of dielectric oxide material in a FET region and overlying a semiconductor substrate. A high-K dielectric layer is deposited overlying the interlayer. Fluorine is incorporated into the interlayer and/or the high-K dielectric layer.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming an interlayer of dielectric oxide material in a FET region and overlying a semiconductor substrate. A high-K dielectric layer is deposited overlying the interlayer. Fluorine is incorporated into the interlayer and/or the high-K dielectric layer.

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.

Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.