Patents by Inventor Raul Cernea

Raul Cernea has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050232010
    Abstract: An array of memory cells of an integrated circuit are organized so metal bitlines are segmented. The memory cells may be nonvolatile memory cells such as floating gate, Flash, EEPROM, and EPROM cells. The bitlines for the memory cells are strapped to metal, and the metal bitline is segmented. The individual segments may be selectively connected to voltages as desired to allow configuring (e.g., programming) or reading of the memory cells. The programming voltage may be a high voltage, above the VCC of the integrated circuit. By dividing the metal bitlines into segments, this reduces noise between bitlines and improve the performance and reliability, and reduce power consumption because the parasitic capacitances are reduced compared to a long metal bitline (i.e., where all the segments are connected together and operated as one).
    Type: Application
    Filed: June 13, 2005
    Publication date: October 20, 2005
    Inventor: Raul Cernea
  • Patent number: 6934195
    Abstract: A memory system (e.g., memory card) for reading and programming (writing) of dual cell memory elements is disclosed. According to one aspect of the invention, all bit lines for the memory system can be productively used during reading or programming so as to achieve improved (e.g., maximum) parallelism of read and/or program operations. The memory system is typically a non-volatile memory product or device that provides binary or multi-state data storage.
    Type: Grant
    Filed: August 31, 2004
    Date of Patent: August 23, 2005
    Assignee: SanDisk Corporation
    Inventor: Raul A. Cernea
  • Publication number: 20050024946
    Abstract: A memory system (e.g., memory card) for reading and programming (writing) of dual cell memory elements is disclosed. According to one aspect of the invention, all bit lines for the memory system can be productively used during reading or programming so as to achieve improved (e.g., maximum) parallelism of read and/or program operations. The memory system is typically a non-volatile memory product or device that provides binary or multi-state data storage.
    Type: Application
    Filed: August 31, 2004
    Publication date: February 3, 2005
    Inventor: Raul Cernea
  • Publication number: 20050002232
    Abstract: An array of memory cells of an integrated circuit are organized so metal bitlines are segmented. The memory cells may be nonvolatile memory cells such as floating gate, Flash, EEPROM, and EPROM cells. The bitlines for the memory cells are strapped to metal, and the metal bitline is segmented. The individual segments may be selectively connected to voltages as desired to allow configuring (e.g., programming) or reading of the memory cells. The programming voltage may be a high voltage, above the VCC of the integrated circuit. By dividing the metal bitlines into segments, this reduces noise between bitlines and improve the performance and reliability, and reduce power consumption because the parasitic capacitances are reduced compared to a long metal bitline (i.e., where all the segments are connected together and operated as one).
    Type: Application
    Filed: July 6, 2004
    Publication date: January 6, 2005
    Inventor: Raul Cernea
  • Patent number: 6801454
    Abstract: Techniques for producing and utilizing temperature compensated voltages to accurately read signals (e.g., voltages) representing data stored in memory cells of a memory system are disclosed. The memory system is, for example, a memory card. The magnitude of the temperature compensation can be varied or controlled in accordance with a temperature coefficient. These techniques are particularly well suited for used with memory cells that provide multiple levels of storage.
    Type: Grant
    Filed: October 1, 2002
    Date of Patent: October 5, 2004
    Assignee: SanDisk Corporation
    Inventors: Yongliang Wang, Raul A. Cernea, Chi-Ming Wang
  • Patent number: 6795349
    Abstract: A memory system (erg., memory card) for reading and programming (writing) of dual cell memory elements is disclosed. According to one aspect of the invention, all bit lines for the memory system can be productively used during reading or programming so as to achieve improved (e.g., maximum) parallelism of read and/or program operations. The memory system is typically a non-volatile memory product or device that provides binary or multi-state data storage.
    Type: Grant
    Filed: February 28, 2002
    Date of Patent: September 21, 2004
    Assignee: SanDisk Corporation
    Inventor: Raul A. Cernea
  • Publication number: 20040062085
    Abstract: Techniques for producing and utilizing temperature compensated voltages to accurately read signals (e.g., voltages) representing data stored in memory cells of a memory system are disclosed. The memory system is, for example, a memory card. The magnitude of the temperature compensation can be varied or controlled in accordance with a temperature coefficient. These techniques are particularly well suited for used with memory cells that provide multiple levels of storage.
    Type: Application
    Filed: October 1, 2002
    Publication date: April 1, 2004
    Applicant: SanDisk Corporation
    Inventors: Yongliang Wang, Raul A. Cernea, Chi-Ming Wang
  • Publication number: 20030161185
    Abstract: A memory system (erg., memory card) for reading and programming (writing) of dual cell memory elements is disclosed. According to one aspect of the invention, all bit lines for the memory system can be productively used during reading or programming so as to achieve improved (e.g., maximum) parallelism of read and/or program operations. The memory system is typically a non-volatile memory product or device that provides binary or multi-state data storage.
    Type: Application
    Filed: February 28, 2002
    Publication date: August 28, 2003
    Applicant: SanDisk Corporation
    Inventor: Raul A. Cernea