Abstract: In the present invention a guide or carrier is used to assemble and position multiple AiPs (or Integrated Circuit packages) on a substrate and maintain spacing therebetween. In some examples, this reduces package size and maintains desired tolerances. The carrier or guard is to be thin and flexible so as to allow some movement but maintain tolerances at specific locations.

Abstract: Examples disclosed herein relate to a high frequency component isolation for wireless and radar systems. The disclosure herein includes a radar system that has an array of radiating elements and a phase control module coupled to the array of radiating elements. The phase control module is configured to isolate one or more transmission signal paths through the phase control module from at least one conductor electrically coupled to one or more active circuits in the phase control module, the at least one conductor proximate to the one or more transmission signal paths. The phase control module is configured to adjust a reactance in a transmission signal propagating through the isolated one or more transmission signal paths to one or more radiating elements of the array of radiating elements. Other examples disclosed herein include beamforming system with high frequency component isolation and a method of beamforming with high frequency component isolation.

Abstract: Examples disclosed herein relate to a switchable reflective phase shifter for millimeter wave applications. The switchable reflective phase shifter has a switchable phase shift network with a plurality of switches to activate a plurality of phase subranges in response to a plurality of bias voltages provided by a control module, and a reflective phase shifter to generate phase shifts in a given phase subrange activated by a given switch in the plurality of switches.

Abstract: In the present invention a guide or carrier is used to assemble and position multiple AiPs (or Integrated Circuit packages) on a substrate and maintain spacing therebetween. In some examples, this reduces package size and maintains desired tolerances. The carrier or guard is to be thin and flexible so as to allow some movement but maintain tolerances at specific locations.

Abstract: Examples disclosed herein relate to a radar system for three-dimensional beam scanning that includes an antenna module that radiates radio frequency (RF) beams with an analog beamforming antenna in a plurality of directions using phase control elements and generates radar data capturing a surrounding environment from received RF return signals. The antenna module includes a first transceiver operational at a first frequency and configured to scan a field of view with first RF beams along a first axis, and a second transceiver operational at a second frequency and configured to scan the field of view with second RF beams along a second axis. The radar system also includes a perception module that detects and identifies a target in the surrounding environment from the radar data.

Abstract: An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.

Abstract: Examples disclosed herein relate to a high frequency component isolation for wireless and radar systems. The disclosure herein includes a radar system that has an array of radiating elements and a phase control module coupled to the array of radiating elements. The phase control module is configured to isolate one or more transmission signal paths through the phase control module from at least one conductor electrically coupled to one or more active circuits in the phase control module, the at least one conductor proximate to the one or more transmission signal paths. The phase control module is configured to adjust a reactance in a transmission signal propagating through the isolated one or more transmission signal paths to one or more radiating elements of the array of radiating elements. Other examples disclosed herein include beamforming system with high frequency component isolation and a method of beamforming with high frequency component isolation.

Abstract: A method and apparatus for adjusting the slope of insertion loss of digital step attenuator (DSA). The DSA is implemented on an integrated circuit. The DSA has two series inductances that are introduced between the input of DSA cell and a resistor in the cell, and the output of DSA cell and another resistor in the cell. In one embodiment, adjustment in the value of the series inductances is as achieved by altering the locations of the input port and the output ports. In another embodiment, adjustment in the value of the inductances is achieved by tailoring the length and width of the conductor trace used to connect the input and output ports to the series resistors. The adjustment in the values of the inductances provides a means by which the roll-off of the insertion loss as a function of frequency in the attenuation state can be controlled.

Abstract: An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.

Abstract: An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.

Abstract: Systems, methods, and apparatus for reducing standing wave reflections between delay line modules are described. The delay line modules include semiconductor switches, particularly MOSFET switches fabricated on silicon-on-insulator (“SOI”) and silicon-on-sapphire (“SOS”) substrates and embedded attenuators. According to one aspect, a delay line module includes two switches with delay lines coupled between respective output ports of the switches. Each switch includes MOSFET switches forming conduction paths with selectable high and low impedances. According to another aspect, at least one of the conduction paths includes an attenuator block formed by one or more shunting resistors coupled to one of the MOSFET switches. The output ports of the switches can be selectively coupled to a reference ground via a shunted MOSFET switch.

Abstract: Systems, methods, and apparatus for reducing standing wave reflections between delay line modules are described. The delay line modules include semiconductor switches, particularly MOSFET switches fabricated on silicon-on-insulator (“SOI”) and silicon-on-sapphire (“SOS”) substrates and embedded attenuators.

Abstract: An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.

Abstract: An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.

Abstract: An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.

Abstract: An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.

Abstract: An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.

Abstract: Systems, methods, and apparatus for reducing standing wave reflections between delay line modules are described. The delay line modules include semiconductor switches, particularly MOSFET switches fabricated on silicon-on-insulator (“SOI”) and silicon-on-sapphire (“SOS”) substrates and embedded attenuators.

Abstract: A monolithically integrated switch configured to operate at an input signal frequency ranging from 0 Hz to 80 GHz. The switch has an input port and two output ports. A first conduction path is provided from the input port to the first output port. A second conduction path is provided from the input port to the second output port. In addition, a first shunting path is provided between the first output port and a reference and a second shunting path is provided between the second output and the reference. In a first mode, the first conduction path and the second shunting path have a low impedance. The second conduction path and the first shunting path have a high impedance. In a second mode, the first conduction path and the second shunting path have a high impedance. The second conduction path and the first shunting path have a low impedance.

Abstract: An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.