Abstract: A semiconductor substrate structure includes a semiconductor substrate (P-type), a first buried well region (N-type) disposed in the semiconductor substrate, a first buried layer (N-type) and a second buried layer (P-type) disposed in the semiconductor substrate and on the first buried well region. The first buried layer has a first portion and a second portion. The second buried layer is located between the first portion and the second portion. A top surface of the first portion, a top surface of the second buried layer, and a top surface of the second portion are level with a top surface of the semiconductor substrate, a sidewall of the first portion is aligned with a sidewall of the first buried well region, and a sidewall of the second portion is aligned with another sidewall of the first buried well region. A semiconductor device includes the semiconductor substrate structure and an epitaxial layer.

Abstract: A semiconductor substrate structure includes a semiconductor substrate having a first conductivity type, and a first buried well region disposed in the semiconductor substrate, wherein the first buried well region has a second conductivity type that is opposite to the first conductivity type. The semiconductor substrate structure also includes a first buried layer and a second buried layer disposed in the semiconductor substrate and on the first buried well region, wherein the first buried layer has the second conductivity type, the second buried layer has the first conductivity type, the first buried layer has a first portion and a second portion, and the second buried layer is located between the first portion and the second portion.