Patents by Inventor Ravi Jallepally
Ravi Jallepally has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220010431Abstract: A method and apparatus for producing a gas distribution apparatus are described herein. More specifically, a method and apparatus for producing triple-channel gas distribution apparatus is described herein. The gas distribution apparatus described herein includes an upper plate, a middle plate, and a lower plate. The middle plate and the lower plate are machined before all of the upper plate, the middle plate, and the lower plate are bonded. Additional machining is then performed on the gas distribution apparatus. The gas distribution apparatus is used to distribute three or more process gases into a processing chamber.Type: ApplicationFiled: July 8, 2020Publication date: January 13, 2022Inventors: Kazuya DAITO, Ravi JALLEPALLY, Harpreet SINGH
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Patent number: 10519546Abstract: Outer distribution rings and gas distribution apparatus with outer distribution rings to deliver a gas flow to a process region of a process chamber are described. The outer distribution rings include at least one plenum in fluid communication with a plurality of openings forming a plurality of trenches to allow gas to flow from the plenum through the openings and down an inner peripheral face of the outer distribution ring.Type: GrantFiled: November 9, 2018Date of Patent: December 31, 2019Assignee: Applied Materials, Inc.Inventors: Ravi Jallepally, Muhammad M. Rasheed, Ilker Durukan
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Publication number: 20190078205Abstract: Outer distribution rings and gas distribution apparatus with outer distribution rings to deliver a gas flow to a process region of a process chamber are described. The outer distribution rings include at least one plenum in fluid communication with a plurality of openings forming a plurality of trenches to allow gas to flow from the plenum through the openings and down an inner peripheral face of the outer distribution ring.Type: ApplicationFiled: November 9, 2018Publication date: March 14, 2019Inventors: Ravi Jallepally, Muhammad M. Rasheed, Ilker Durukan
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Patent number: 10167553Abstract: Outer distribution rings and gas distribution apparatus with outer distribution rings to deliver a gas flow to a process region of a process chamber are described. The outer distribution rings include at least one plenum in fluid communication with a plurality of openings forming a plurality of trenches to allow gas to flow from the plenum through the openings and down an inner peripheral face of the outer distribution ring.Type: GrantFiled: March 30, 2017Date of Patent: January 1, 2019Assignee: Applied Materials, Inc.Inventors: Muhammad M. Rasheed, Ravi Jallepally, Ilker Durukan
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Publication number: 20170283947Abstract: Outer distribution rings and gas distribution apparatus with outer distribution rings to deliver a gas flow to a process region of a process chamber are described. The outer distribution rings include at least one plenum in fluid communication with a plurality of openings forming a plurality of trenches to allow gas to flow from the plenum through the openings and down an inner peripheral face of the outer distribution ring.Type: ApplicationFiled: March 30, 2017Publication date: October 5, 2017Inventors: Muhammad M. Rasheed, Ravi Jallepally, Ilker Durukan
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Patent number: 7921803Abstract: The present invention generally provides method and apparatus for non-contact temperature measurement in a semiconductor processing chamber. Particularly, the present invention provides methods and apparatus for non-contact temperature measurement for temperature below 500° C. One embodiment of the present invention provides an apparatus for processing semiconductor substrates. The apparatus comprises a target component comprises a material with higher emissivity than the one or more substrates.Type: GrantFiled: September 21, 2007Date of Patent: April 12, 2011Assignee: Applied Materials, Inc.Inventors: Joseph Yudovsky, Brendan McDougall, Ravi Jallepally, Yi-Chiau Huang, Maitreyee Mahajani, Kevin Griffin, Andrew C. Sherman
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Publication number: 20100124249Abstract: Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a Virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.Type: ApplicationFiled: November 19, 2008Publication date: May 20, 2010Applicant: Applied Materials, Inc.Inventors: WOLFGANG ADERHOLD, Ravi Jallepally, Balasubramanian Ramachandran, Aaron M. Hunter, Ilias Iliopoulos
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Publication number: 20090078198Abstract: The present invention generally provides method and apparatus for non-contact temperature measurement in a semiconductor processing chamber. Particularly, the present invention provides methods and apparatus for non-contact temperature measurement for temperature below 500° C. One embodiment of the present invention provides an apparatus for processing semiconductor substrates. The apparatus comprises a target component comprises a material with higher emissivity than the one or more substrates.Type: ApplicationFiled: September 21, 2007Publication date: March 26, 2009Inventors: JOSEPH YUDOVSKY, Brendan McDougall, Ravi Jallepally, Yi-Chiau Huang, Maitreyee Mahajani, Kevin Griffin, Andrew C. Sherman
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Patent number: 7509035Abstract: A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.Type: GrantFiled: August 2, 2005Date of Patent: March 24, 2009Assignee: Applied Materials, Inc.Inventors: Joseph M. Ranish, Corina E. Tanasa, Sundar Ramamurthy, Claudia Lai, Ravi Jallepally, Ramachandran Balasubramanian, Aaron M. Hunter, Agus Tjandra, Norman Tam
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Publication number: 20080090309Abstract: A method for rapid thermal annealing is disclosed. As the substrate is inserted into an annealing chamber, it begins to heat due to the heat radiating from chamber components that were heated when a previous substrate was annealed. Thus, the leading edge of the substrate may be at an elevated temperature while the trailing edge of the substrate may be at room temperature while the substrate is inserted causing a temperature gradient is present across the substrate. Once the substrate is completely inserted into the annealing chamber, the temperature gradient may still be present. By compensating for the temperature gradient across the substrate, the substrate may be annealed uniformly.Type: ApplicationFiled: May 20, 2007Publication date: April 17, 2008Inventors: JOSEPH RANISH, Balasubramanian Ramachandran, Ravi Jallepally, Sundar Ramamurthy, Vedapuram Achutharaman, Brian Haas, Aaron Hunter, Wolfgang Aderhold
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Patent number: 7127367Abstract: Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.Type: GrantFiled: September 24, 2004Date of Patent: October 24, 2006Assignee: Applied Materials, Inc.Inventors: Balasubramanian Ramachandran, Joseph Michael Ranish, Ravi Jallepally, Sundar Ramamurthy, Raman Achutharaman, Brian Haas, Aaron Hunter
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Publication number: 20060066193Abstract: A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.Type: ApplicationFiled: August 2, 2005Publication date: March 30, 2006Inventors: Joseph Ranish, Corina Tanasa, Sundar Ramamurthy, Claudia Lai, Ravi Jallepally, Ramachandran Balasubramanian, Aaron Hunter, Agus Tjandra, Norman Tam
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Patent number: 6897131Abstract: Lamp based spike annealing was improved to address the aggressive requirements of <100 nm Ultra Shallow Junction (USJ) technologies. Improvements focused on enhancing cool down rates, and thereby improving spike sharpness. Boron ion implanted substrates with varying ion-implanted energy and dose were then annealed to characterize the improvements in spike annealing. A greater than 10% improvement in sheet resistance and junction depth was realized on substrates that were annealed with the improved spike profile. The improved spike anneal had the same comparable uniformity to the standard spike anneal.Type: GrantFiled: September 22, 2003Date of Patent: May 24, 2005Assignee: Applied Materials, Inc.Inventors: Balasubramanian Ramachandran, Ravi Jallepally, Ryan C. Boas, Sundar Ramamurthy, Amir Al-Bayati, Houda Graoui, Joseph M. Spear
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Publication number: 20050102108Abstract: Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.Type: ApplicationFiled: September 24, 2004Publication date: May 12, 2005Inventors: Balasubramanian Ramachandran, Joseph Ranish, Ravi Jallepally, Sundar Ramamurthy, Raman Achutharaman, Brian Haas, Aaron Hunter
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Patent number: 6773507Abstract: Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.Type: GrantFiled: August 7, 2002Date of Patent: August 10, 2004Assignee: Applied Materials, Inc.Inventors: Ravi Jallepally, Shih-Hung Li, Alain Duboust, Jun Zhao, Liang-Yuh Chen, Daniel A. Carl
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Publication number: 20040126999Abstract: Lamp based spike annealing was improved to address the aggressive requirements of <100 nm Ultra Shallow Junction (USJ) technologies. Improvements focused on enhancing cool down rates, and thereby improving spike sharpness. Boron ion implanted substrates with varying ion-implanted energy and dose were then annealed to characterize the improvements in spike annealing. A greater than 10% improvement in sheet resistance and junction depth was realized on substrates that were annealed with the improved spike profile. The improved spike anneal had the same comparable uniformity to the standard spike anneal.Type: ApplicationFiled: September 22, 2003Publication date: July 1, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Balasubramanian Ramachandran, Ravi Jallepally, Ryan C. Boas, Sundar Ramamurthy, Amir Al-Bayati, Houda Graoui, Joseph M. Spear
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Publication number: 20030139005Abstract: A semiconductor processing chamber has been utilized to perform sequential deposition of high-K Al2O3 thin films on a substrate disposed in the chamber employing low viscosity precursors. The method commences with introduction of an aluminum precursor into the processing chamber. In this manner, a monolayer of aluminum precursor is chemisorbed onto the substrate surface. Thereafter, non-chemisorbed aluminum precursor is purged from the processing chamber, followed by introduction of an oxygen precursor. The oxygen precursor reacts with the chemisorbed layer, resulting in a monolayer of Al2O3. Finally, excess oxygen precursor and by-products of the reaction are purged completing the sequential deposition cycle. The sequential deposition cycle can be repeated to grow the Al2O3 film to a desired thickness.Type: ApplicationFiled: January 18, 2002Publication date: July 24, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Kevin Song, Ravi Jallepally, Shih-Hung Li, Liang-Yuh Chen
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Publication number: 20030106490Abstract: Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.Type: ApplicationFiled: August 7, 2002Publication date: June 12, 2003Applicant: Applied Materials, Inc.Inventors: Ravi Jallepally, Shih-Hung Li, Alain Duboust, Jun Zhao, Liang-Yuh Chen, Daniel A. Carl
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Patent number: 6450116Abstract: An apparatus and method for exposing a substrate to plasma including a first reaction chamber adapted to generate a plasma comprising ions and radicals and a second reaction chamber coupled to the first reaction chamber and adapted to house a substrate at a sight in the second reaction chamber. The second reaction chamber is coupled to the first reaction chamber by an inlet member and radicals of the plasma flow through the inlet member into the second reaction chamber.Type: GrantFiled: November 12, 1999Date of Patent: September 17, 2002Assignee: Applied Materials, Inc.Inventors: David B. Noble, Ravi Jallepally, Nathan D'Astici, Gary Miner, Turgut Sahin, Guangcai Xing, Yashraj Bhatnagar
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Publication number: 20020073925Abstract: An apparatus and method for exposing a substrate to plasma including a first reaction chamber adapted to generate a plasma comprising ions and radicals and a second reaction chamber coupled to the first reaction chamber and adapted to house a substrate at a sight in the second reaction chamber. The second reaction chamber is coupled to the first reaction chamber by an inlet member and radicals of the plasma flow through the inlet member into the second reaction chamber.Type: ApplicationFiled: November 12, 1999Publication date: June 20, 2002Inventors: DAVID B. NOBLE, RAVI JALLEPALLY, NATHAN D'ASTICI, GARY MINER, TURGUT SAHIN, GUANGCAI XING, YASHRAJ BHATNAGAR