Abstract: Metal complexes including cyclopentadienyl ligands and methods of using such metal complexes to prepare metal-containing films are provided.

Abstract: Metal complexes including cyclopentadienyl ligands and methods of using such metal complexes to prepare metal-containing films are provided.

Abstract: Metal complexes containing substituted allyl ligands and methods of using such metal complexes to prepare metal-containing films are provided.

Abstract: Metal complexes containing substituted allyl ligands and methods of using such metal complexes to prepare metal-containing films are provided.

Abstract: Metal complexes including cyclopentadienyl ligands and methods of using such metal complexes to prepare metal-containing films are provided.

Abstract: Methods are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising an amidoimino-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a co-reagent.

Abstract: Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided.

Abstract: Manganese complexes, methods of making the same, and use thereof in thin film deposition, such as CVD and ALD are provided herein.

Abstract: Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided.

Abstract: Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided.

Abstract: Manganese complexes, methods of making the same, and use thereof in thin film deposition, such as CVD and ALD are provided herein.

Abstract: A solid precursor delivery assembly generally includes a container having upper and lower portions and chambers defined within the container, including an inlet chamber, an outlet chamber, and first and second precursor chambers. The first and second precursor chambers are configured for holding precursor material within the container. Sintered frits are fixedly coupled and sealed to an interior portion of the container, and define at least part of the chambers within the container. At least one of the sintered frits is configured for retaining precursor material thereon within the first precursor chamber, and at least one of the sintered frits is configured for retaining precursor material thereon within the second precursor chamber. An inlet is coupled to the container for delivering carrier gas into the container, and an outlet is coupled to the container for use in removing vaporized precursor material and carrier gas from the container.

Abstract: Molybdenum complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The molybdenum complexes correspond in structure to Formula (I) and Formula (II), wherein R1, R3, R5, R7, R8 and R10 are independently and at each occurrence alkyl; R2, R6 and R9 are independently alkyl; R4 and R11 are independently and at each occurrence selected from the group consisting of alkyl, alkenyl, and alkynyl; x, z, a, c, d and f are independently zero, 1, or 2; y, b and e are independently zero or 1; and n and m are independently zero to 5.

Abstract: A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.

Abstract: Methods are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising an amidoimino-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a co-reagent.

Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted ?3-allyl)(carbonyl)metal complexes.

Abstract: Molybdenum complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The molybdenum complexes correspond in structure to Formula (I) and Formula (II), wherein R1, R3, R5, R7, R8 and R10 are independently and at each occurrence alkyl; R2, R6 and R9 are independently alkyl; R4 and R11 are independently and at each occurrence selected from the group consisting of alkyl, alkenyl, and alkynyl; x, z, a, c, d and f are independently zero, 1, or 2; y, b and e are independently zero or 1; and n and m are independently zero to 5.

Abstract: A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido) silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and

Abstract: Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.

Abstract: An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R)nM(CO)2(X)??(Formula I) wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).