Patents by Inventor Ravi Laxman
Ravi Laxman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8227358Abstract: Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazine group, wherein X1, X2, X3, and X4 may be the same or different from one another.Type: GrantFiled: March 28, 2011Date of Patent: July 24, 2012Assignee: Air Liquide Electronics U.S. LPInventors: Ziyun Wang, Ashutosh Misra, Ravi Laxman
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Publication number: 20120153048Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an ampoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.Type: ApplicationFiled: February 16, 2012Publication date: June 21, 2012Applicant: Advanced Technology Materials, Inc.Inventors: John N. Gregg, Scott L. Battle, Jeffrey I. Banton, Donn K. Naito, Ravi Laxman
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Patent number: 8101788Abstract: Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X1, X2, X3, and X4 may be the same or different from one another.Type: GrantFiled: April 2, 2007Date of Patent: January 24, 2012Assignee: Air Liquide Electronics U.S. LPInventors: Ziyun Wang, Ashutosh Misra, Ravi Laxman
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Publication number: 20110171381Abstract: Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazine group, wherein X1, X2, X3, and X4 may be the same or different from one another.Type: ApplicationFiled: March 28, 2011Publication date: July 14, 2011Applicant: Air Liquide Electronics U.S. LPInventors: Ziyun WANG, Ashutosh Misra, Ravi Laxman
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Publication number: 20110052482Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.Type: ApplicationFiled: November 5, 2010Publication date: March 3, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: John N. Gregg, Scott L. Battle, Jeffrey I. Banton, Donn K. Naito, Ravi Laxman
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Patent number: 7828274Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.Type: GrantFiled: January 23, 2009Date of Patent: November 9, 2010Assignee: Advanced Technology Materials, Inc.Inventors: John N. Gregg, Scott L. Battle, Jeffrey I. Banton, Donn K. Naito, Ravi Laxman
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Patent number: 7770448Abstract: A chemical storage device and a method for monitoring chemical usage are described herein. The device and disclosed method utilize a chemical storage canister and a load cell integrated into one transportable unit. The load cell is capable of compensating for the added weight of attached dispensing devices used in the semiconductor industry. Additionally, the load cell continuously displays the weight of the chemicals as they are withdrawn from the chemical storage device. These functionalities are included in the control logic of the load cell which is incorporated into the load cell itself.Type: GrantFiled: July 19, 2006Date of Patent: August 10, 2010Assignee: Air Liquide Electronics U.S. LP.Inventors: Ashutosh Misra, Benjamin J. Jurcik, Jr., Ravi Laxman
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Publication number: 20090136668Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.Type: ApplicationFiled: January 23, 2009Publication date: May 28, 2009Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: John N. Gregg, Scott L. Battle, Jeffrey I. Banton, Donn K. Naito, Ravi Laxman
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Publication number: 20080145978Abstract: Methods for making a semiconductor device are disclosed herein. In general, the disclosed methods utilize compounds containing silicon, nitrogen, and germanium. Furthermore, the methods and compositions described are particularly applicable for formation of layers over gate structures or electrodes, which are often used in the manufacture of devices such as transistors. The silicon, nitrogen, and germanium containing compounds may allow stress/strain tuning and engineering of deposited layers over the gate structure.Type: ApplicationFiled: September 21, 2007Publication date: June 19, 2008Applicant: AIR LIQUIDE ELECTRONICS U.S. LPInventor: Ravi Laxman
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Publication number: 20080081106Abstract: Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X1, X2, X3, and X4 may be the same or different from one another.Type: ApplicationFiled: April 2, 2007Publication date: April 3, 2008Applicant: AIR LIQUIDE ELECTRONICS U.S. LPInventors: Ziyun Wang, Ashutosh Misra, Ravi Laxman
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Publication number: 20080057218Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resuting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment.Type: ApplicationFiled: October 30, 2007Publication date: March 6, 2008Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: John Gregg, Scott Battle, Jeffrey Banton, Donn Naito, Ravi Laxman
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Publication number: 20080041310Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable mateiral disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resuting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment.Type: ApplicationFiled: August 28, 2007Publication date: February 21, 2008Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: John Gregg, Scott Battle, Jeffrey Banton, Donn Naito, Ravi Laxman
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Patent number: 7300038Abstract: Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the structure. For at least one disclosed embodiment, the structure may help support material with an increased exposed surface area relative to a maximum exposed surface area the material could have at rest in the container absent the structure. For at least one disclosed embodiment, the structure may define one or more material support surfaces in an interior region of the container in addition to a bottom surface of the interior region of the container. For at least one disclosed embodiment, the structure may define in an interior region of the container one or more material support surfaces having a total surface area greater than a surface area of a bottom surface of the interior region of the container.Type: GrantFiled: June 1, 2004Date of Patent: November 27, 2007Assignee: Advanced Technology Materials, Inc.Inventors: John N. Gregg, Scott L. Battle, Jeffrey I. Banton, Donn K. Naito, Ravi Laxman
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Patent number: 7293569Abstract: Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In another embodiment, a method of removing at least one chemical precursor from a semiconductor fabrication system comprises forcing a solvent containing at least one alkylsilane through the semiconductor fabrication system and dissolving the at least one chemical precursor in the solvent. The solvent may also contain mixtures of different alkylsilanes and other organic solvents.Type: GrantFiled: July 10, 2006Date of Patent: November 13, 2007Assignee: Air Liquide Electronics U.S. LPInventors: Ravi Laxman, Ashutosh Misra, Jean-Marc Girard
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Publication number: 20070131252Abstract: Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In another embodiment, a method of removing at least one chemical precursor from a semiconductor fabrication system comprises forcing a solvent containing at least one alkylsilane through the semiconductor fabrication system and dissolving the at least one chemical precursor in the solvent. The solvent may also contain mixtures of different alkylsilanes and other organic solvents.Type: ApplicationFiled: July 10, 2006Publication date: June 14, 2007Inventors: Ravi Laxman, Ashutosh Misra
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Publication number: 20070062270Abstract: A chemical storage device and a method for monitoring chemical usage are described herein. The device and disclosed method utilize a chemical storage canister and a load cell integrated into one transportable unit. The load cell is capable of compensating for the added weight of attached dispensing devices used in the semiconductor industry. Additionally, the load cell continuously displays the weight of the chemicals as they are withdrawn from the chemical storage device. These functionalities are included in the control logic of the load cell which is incorporated into the load cell itself.Type: ApplicationFiled: July 19, 2006Publication date: March 22, 2007Inventors: Ashutosh Misra, Benjamin Jurcik, Ravi Laxman
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Publication number: 20060235182Abstract: A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.Type: ApplicationFiled: June 14, 2006Publication date: October 19, 2006Inventors: Chongying Xu, Thomas Baum, Alexander Borovik, Ziyun Wang, James Lin, Scott Battle, Ravi Laxman
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Publication number: 20050038276Abstract: A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first step, a dense SiOC thin film is CVD deposited from the organosilicon precursor having at least one alkyl group and at least one cleavable organic functional group, having retained therein at least a portion of the alkyl and cleavable organic functional groups. In a second step, the dense SiOC thin film is post annealed to effectively remove the volatile liquid or gaseous by-products, resulting in a porous low-dielectric constant SiOC thin film. The porous, low dielectric constant, SiOC thin films are useful as insulating layers in microelectronic device structures. Preferred porous, low-dielectric SiOC thin films are produced using di(formato)dimethylsilane as the organosilicon precursor.Type: ApplicationFiled: September 9, 2004Publication date: February 17, 2005Inventors: Ravi Laxman, Chongying Xu, Thomas Baum
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Publication number: 20050006799Abstract: Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the structure. For at least one disclosed embodiment, the structure may help support material with an increased exposed surface area relative to a maximum exposed surface area the material could have at rest in the container absent the structure. For at least one disclosed embodiment, the structure may define one or more material support surfaces in an interior region of the container in addition to a bottom surface of the interior region of the container. For at least one disclosed embodiment, the structure may define in an interior region of the container one or more material support surfaces having a total surface area greater than a surface area of a bottom surface of the interior region of the container.Type: ApplicationFiled: June 1, 2004Publication date: January 13, 2005Inventors: John Gregg, Scott Battle, Jeffrey Banton, Donn Naito, Ravi Laxman