Abstract: In some embodiments, integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate are presented.

Abstract: A microelectronic package comprises a substrate (110), a silicon patch (120) embedded in the substrate, a first interconnect structure (131) at a first location of the silicon patch and a second interconnect structure (132) at a second location of the silicon patch, and an electrically conductive line (150) in the silicon patch connecting the first interconnect structure and the second interconnect structure to each other.

Abstract: A microelectronic package comprises a substrate (110), a silicon patch (120) embedded in the substrate, a first interconnect structure (131) at a first location of the silicon patch and a second interconnect structure (132) at a second location of the silicon patch, and an electrically conductive line (150) in the silicon patch connecting the first interconnect structure and the second interconnect structure to each other.

Abstract: The present disclosure relates to the field of fabricating microelectronic packages, wherein microelectronic devices of the microelectronic packages may have magnetic attachment structures comprising a magnetic material formed on an attachment structure. The microelectronic device may be aligned on a substrate with a magnetic field and then held in place therewith while being attached to the substrate. The microelectronic device may also be aligned with an alignment plate which magnetically aligns and holds the component in place while being packaged.

Abstract: A microelectronic package comprises a substrate (110), a silicon patch (120) embedded in the substrate, a first interconnect structure (131) at a first location of the silicon patch and a second interconnect structure (132) at a second location of the silicon patch, and an electrically conductive line (150) in the silicon patch connecting the first interconnect structure and the second interconnect structure to each other.

Abstract: In some embodiments, integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate are presented.

Abstract: The present invention discloses a method of confining a liquid metal alloy within a closed-loop system; distributing a first portion of the liquid metal alloy in a cavity within the closed-loop system; turning on an electromagnet to generate a magnetic field to permeate flexible sidewalls of the cavity; attracting the liquid metal alloy in the cavity towards the electromagnet to expand the flexible sidewalls; inducing a second portion of the liquid metal alloy to enter the cavity from an inlet end of a pipe within the closed-loop system; turning off the electromagnet; repelling the liquid metal alloy in the cavity away from the electromagnet to contract the flexible sidewalls; and inducing a third portion of the liquid metal alloy to exit the cavity to an outlet end of the pipe.

Abstract: A microelectronic package comprises a substrate (110), a silicon patch (120) embedded in the substrate, a first interconnect structure (131) at a first location of the silicon patch and a second interconnect structure (132) at a second location of the silicon patch, and an electrically conductive line (150) in the silicon patch connecting the first interconnect structure and the second interconnect structure to each other.

Abstract: The present invention discloses a method of confining a liquid metal alloy within a closed-loop system; distributing a first portion of the liquid metal alloy in a cavity within the closed-loop system; turning on an electromagnet to generate a magnetic field to permeate flexible sidewalls of the cavity; attracting the liquid metal alloy in the cavity towards the electromagnet to expand the flexible sidewalls; inducing a second portion of the liquid metal alloy to enter the cavity from an inlet end of a pipe within the closed-loop system; turning off the electromagnet; repelling the liquid metal alloy in the cavity away from the electromagnet to contract the flexible sidewalls; and inducing a third portion of the liquid metal alloy to exit the cavity to an outlet end of the pipe.

Abstract: An integrated circuit to be cooled may be abutted in face-to-face abutment with a cooling integrated circuit. The cooling integrated circuit may include electroosmotic pumps to pump cooling fluid through the cooling integrated circuits via microchannels to thereby cool the heat generating integrated circuit. The electroosmotic pumps may be fluidically coupled to external radiators which extend upwardly away from a package including the integrated circuits. In particular, the external radiators may be mounted on tubes which extend the radiators away from the package.

Abstract: The present invention discloses a method of confining a liquid metal alloy within a closed-loop system; distributing a first portion of the liquid metal alloy in a cavity within the closed-loop system; turning on an electromagnet to generate a magnetic field to permeate flexible sidewalls of the cavity; attracting the liquid metal alloy in the cavity towards the electromagnet to expand the flexible sidewalls; inducing a second portion of the liquid metal alloy to enter the cavity from an inlet end of a pipe within the closed-loop system; turning off the electromagnet; repelling the liquid metal alloy in the cavity away from the electromagnet to contract the flexible sidewalls; and inducing a third portion of the liquid metal alloy to exit the cavity to an outlet end of the pipe.

Abstract: A liquid cooling device for a die including a support block supporting a plurality of substantially vertical channels transporting fluid to and from a bare die surface for heat removal. The device is mounted on top of a bare die using a frame or spring. In another embodiment, the device allows thermoelectric cooling of a dedicated fluid line.

Abstract: The present invention discloses a method of confining a liquid metal alloy within a closed-loop system; distributing a first portion of the liquid metal alloy in a cavity within the closed-loop system; turning on an electromagnet to generate a magnetic field to permeate flexible sidewalls of the cavity; attracting the liquid metal alloy in the cavity towards the electromagnet to expand the flexible sidewalls; inducing a second portion of the liquid metal alloy to enter the cavity from an inlet end of a heat pipe within the closed-loop system; turning off the electromagnet; repelling the liquid metal alloy in the cavity away from the electromagnet to contract the flexible sidewalls; and inducing a third portion of the liquid metal alloy to exit the cavity to an outlet end of the heat pipe.

Abstract: To accommodate high power densities associated with high-performance integrated circuits, an integrated circuit (IC) package includes a heat-dissipating structure in which heat is dissipated from a surface of one or more dice to a heat spreader. The heat spreader has a fluid-conducting channel formed therein, and a fluid coolant may be circulated through the channel via a micropump. In an embodiment, the channel is located at or near a surface of the heat spreader, and a heat-generating IC is in thermal contact with the heat spreader. In an embodiment, the IC is a thinned die that is coupled to the heat spreader via a thinned thermal interface material. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described.

Abstract: A method of preparing a diamond body, and a diamond body thus prepared. A covering layer is provided on at least one surface of the diamond body such that the covering layer adheres to the at least one surface. The covering layer is in turn provided with a predetermined configuration.

Abstract: An integrated circuit to be cooled may be abutted in face-to-face abutment with a cooling integrated circuit. The cooling integrated circuit may include electroosmotic pumps to pump cooling fluid through the cooling integrated circuits via microchannels to thereby cool the heat generating integrated circuit. The electroosmotic pumps may be fluidically coupled to external radiators which extend upwardly away from a package including the integrated circuits. In particular, the external radiators may be mounted on tubes which extend the radiators away from the package.

Abstract: An integrated circuit to be cooled may be abutted in face-to-face abutment with a cooling integrated circuit. The cooling integrated circuit may include electroosmotic pumps to pump cooling fluid through the cooling integrated circuits via microchannels to thereby cool the heat generating integrated circuit. The electroosmotic pumps may be fluidically coupled to external radiators which extend upwardly away from a package including the integrated circuits. In particular, the external radiators may be mounted on tubes which extend the radiators away from the package.

Abstract: Two-phase microchannel heat exchangers for cooling integrated circuit (IC) dies and cooling systems employing the same are disclosed. The heat exchangers include thermal masses having a plurality of microchannels formed therein. In one set of configurations, the IC die is coupled to a thermal mass having a plurality of open microchannels such that a hermetic seal is formed between the die and the bases of the microchannel walls, thus forming a plurality of closed microchannels. In another set of configurations, a separate microchannel heat exchanger is thermally coupled to an IC die and operatively coupled to the IC die via coupling to a substrate on which the IC die is mounted. The microchannel heat exchangers may be employed in a closed loop cooling system includes a pump and a heat rejecter. The microchannels are configured to support two-phase heat transfer using a working fluid such as water.

Abstract: Integrated circuit (IC) packages employing two-phase microchannel heat exchangers for cooling the packages' IC dies and cooling systems employing the same are disclosed. The heat exchangers include thermal masses having a plurality of microchannels formed therein. In one set of configurations, the IC die is thermally coupled to a pair of microchannel heat exchangers disposed on opposite sides of the die. Top-side microchannel heat exchangers include a thermal mass having a plurality of open microchannels having wall bases that are hermetically sealed with the top surface of the die, thus forming a plurality of closed microchannels. Alternatively, a separate microchannel heat exchanger is thermally coupled to an IC die and operatively coupled to the IC die via coupling to a substrate on which the IC die is mounted. Bottom-side heat exchangers include substrates and chip carriers having microchannels formed therethrough that are thermally coupled to the IC die.

Abstract: A channeled heat sink and a device chassis having one or more integral condensing volumes suited for heat rejecters in conduction with two-phase cooling loops. The channeled heat sink includes a base from which a plurality of hollowed fins extend. Each hollowed fin defines an internal channel having walls configured to condense a working fluid from a vapor phase upon entering the channel into a liquid phase upon exiting the channel. The chassis comprises a shell formed from a base coupled to a plurality of walls. At least one condensing volume is formed in the base and/or the walls of the chassis. The condensing volume is configured to condense a working fluid from a vapor phase to a liquid phase as the working fluid is passed through it.