Patents by Inventor Ravi Mahendra Todi

Ravi Mahendra Todi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9245971
    Abstract: In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the high mobility channel. A portion of a substrate is positioned between the doped region and the high mobility channel.
    Type: Grant
    Filed: September 27, 2013
    Date of Patent: January 26, 2016
    Assignee: QUALCOMM Incorporated
    Inventors: Bin Yang, P R Chidambaram, John Jianhong Zhu, Jihong Choi, Da Yang, Ravi Mahendra Todi, Giridhar Nallapati, Chock Hing Gan, Ming Cai, Samit Sengupta
  • Publication number: 20150091060
    Abstract: In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the high mobility channel.
    Type: Application
    Filed: September 27, 2013
    Publication date: April 2, 2015
    Applicant: QUALCOMM Incorporated
    Inventors: Bin Yang, PR Chidambaram, John Jianhong Zhu, Jihong Choi, Da Yang, Ravi Mahendra Todi, Giridhar Nallapati, Chock Hing Gan, Ming Cai, Samit Sengupta