Patents by Inventor Ravi Silva
Ravi Silva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12237589Abstract: Millimeter wave (mmWave) technology, apparatuses, and methods that relate to transceivers, receivers, and antenna structures for wireless communications are described. The various aspects include co-located millimeter wave (mmWave) and near-field communication (NFC) antennas, scalable phased array radio transceiver architecture (SPARTA), phased array distributed communication system with MIMO support and phase noise synchronization over a single coax cable, communicating RF signals over cable (RFoC) in a distributed phased array communication system, clock noise leakage reduction, IF-to-RF companion chip for backwards and forwards compatibility and modularity, on-package matching networks, 5G scalable receiver (Rx) architecture, among others.Type: GrantFiled: May 2, 2022Date of Patent: February 25, 2025Assignee: Intel CorporationInventors: Erkan Alpman, Arnaud Lucres Amadjikpe, Omer Asaf, Kameran Azadet, Rotem Banin, Miroslav Baryakh, Anat Bazov, Stefano Brenna, Bryan K. Casper, Anandaroop Chakrabarti, Gregory Chance, Debabani Choudhury, Emanuel Cohen, Claudio Da Silva, Sidharth Dalmia, Saeid Daneshgar Asl, Kaushik Dasgupta, Kunal Datta, Brandon Davis, Ofir Degani, Amr M. Fahim, Amit Freiman, Michael Genossar, Eran Gerson, Eyal Goldberger, Eshel Gordon, Meir Gordon, Josef Hagn, Shinwon Kang, Te Yu Kao, Noam Kogan, Mikko S. Komulainen, Igal Yehuda Kushnir, Saku Lahti, Mikko M. Lampinen, Naftali Landsberg, Wook Bong Lee, Run Levinger, Albert Molina, Resti Montoya Moreno, Tawfiq Musah, Nathan G. Narevsky, Hosein Nikopour, Oner Orhan, Georgios Palaskas, Stefano Pellerano, Ron Pongratz, Ashoke Ravi, Shmuel Ravid, Peter Andrew Sagazio, Eren Sasoglu, Lior Shakedd, Gadi Shor, Baljit Singh, Menashe Soffer, Ra'anan Sover, Shilpa Talwar, Nebil Tanzi, Moshe Teplitsky, Chintan S. Thakkar, Jayprakash Thakur, Avi Tsarfati, Yossi Tsfati, Marian Verhelst, Nir Weisman, Shuhei Yamada, Ana M. Yepes, Duncan Kitchin
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Publication number: 20230067839Abstract: The disclosure provides an apparatus for depositing poly(p-xylylene) onto a component. The apparatus comprises a deposition chamber configured to receive a component to be coated therein; an electrical power supply; a platen, disposed inside the deposition chamber and comprising an electrically conductive material, wherein the platen is electrically connected to the electrical power supply and configured to support the component; a monomer reservoir, configured to receive a monomer of poly(p-xylylene) therein; a monomer conduit extending between the monomer reservoir and the deposition chamber; and a heating means configured to heat the monomer reservoir and the monomer conduit to a temperature of between 25 and 250° C.Type: ApplicationFiled: December 15, 2020Publication date: March 2, 2023Inventors: Ravi Silva, Christopher Toby Gibb Smith, Jose Anguita, Michal Delkowski
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Patent number: 10843812Abstract: Components having fibre-reinforced composite structures are disclosed. The component comprises a plurality of structural fibres embedded in a cured matrix material and a plurality of nanostructures such as carbon nanotubes extending from one or more of the structural fibres. In some embodiments a density of the nanostructures is at least 107 nanostructures per cm2 of surface area of the one or more structural fibres. In some embodiments, the nanostructures extend from an outer fibre proximal to an outer surface of the component but not from an inner fibre distal from the outer surface. In some embodiments the one or more structural fibres from which the nanostructures extend are free of a sizing agent.Type: GrantFiled: December 8, 2015Date of Patent: November 24, 2020Assignees: SHORT BROTHERS PLC, UNIVERSITY OF SURREYInventors: Paolo Ballocchi, Philip Jenkins, Ian Hamerton, Ravi Silva, Thomas Pozegic
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Patent number: 10550232Abstract: An article comprises a carbon fibre reinforced plastic (CFRP) substrate, a buffer layer disposed adjacent the substrate, the buffer layer comprising a poly(para-xylylene) polymer; and a moisture barrier coating disposed adjacent the buffer layer.Type: GrantFiled: March 7, 2014Date of Patent: February 4, 2020Assignees: University of Surrey, Airbus Defence and Space GMBHInventors: Jose Virgilio Anguita Rodriguez, Ravi Silva, Ian Hamerton, Winnie Tang, Thomas Theo Stute
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Patent number: 10385449Abstract: A layer stack for growing graphene or carbon nanotubes (CNTs) is described. The layer stack comprises a substrate, a protective layer, and an attachment surface disposed therebetween. The protective layer is configured to allow carbon diffusion therethrough to the attachment surface, such that graphene or CNTs grow therefrom.Type: GrantFiled: June 5, 2015Date of Patent: August 20, 2019Assignee: UNIVERSITY OF SURREYInventors: Sembukuttiarachilage Ravi Silva, Muhammad Ahmad
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Publication number: 20180265217Abstract: Components having fibre-reinforced composite structures are disclosed. The component comprises a plurality of structural fibres embedded in a cured matrix material and a plurality of nanostructures such as carbon nanotubes extending from one or more of the structural fibres. In some embodiments a density of the nanostructures is at least 107 nanostructures per cm2 of surface area of the one or more structural fibres. In some embodiments, the nanostructures extend from an outer fibre proximal to an outer surface of the component but not from an inner fibre distal from the outer surface. In some embodiments the one or more structural fibres from which the nanostructures extend are free of a sizing agent.Type: ApplicationFiled: December 8, 2015Publication date: September 20, 2018Inventors: Paolo BALLOCCHI, Philip JENKINS, Ian HAMERTON, Ravi SILVA, Thomas POZEGIC
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Publication number: 20170121177Abstract: A layer stack for growing graphene or carbon nanotubes (CNTs) is described. The layer stack comprises a substrate, a protective layer, and an attachment surface disposed therebetween. The protective layer is configured to allow carbon diffusion therethrough to the attachment surface, such that graphene or CNTs grow therefrom.Type: ApplicationFiled: June 5, 2015Publication date: May 4, 2017Applicant: UNIVERSITY OF SURREYInventors: Sembukuttiarachilage Ravi SILVA, Muhammad AHMAD
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Patent number: 9334167Abstract: The present invention relates to a method of forming nanostructures or nanomaterials. The method comprises providing a thermal control barrier on a substrate and forming the nanostructures or nanomaterials. The method may, for example, be used to form carbon nanotubes by plasma enhanced chemical vapor deposition using a carbon containing gas plasma: The temperature of the substrate may be maintained at less than 350° C. while the carbon nanotubes are formed.Type: GrantFiled: May 11, 2006Date of Patent: May 10, 2016Assignee: SURREY NANOSYSTEMS LIMITEDInventors: Sembukutiarachilage Ravi Silva, Ben Poul Jensen, Guan Yow Chen
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Publication number: 20160009876Abstract: An article comprises a carbon fibre reinforced plastic (CFRP) substrate, a buffer layer disposed adjacent the substrate, the buffer layer comprising a poly(para-xylylene) polymer; and a moisture barrier coating disposed adjacent the buffer layer.Type: ApplicationFiled: March 7, 2014Publication date: January 14, 2016Applicants: University of Surrey, Astrium limitedInventors: Jose Virgilio Anguita RODRIGUEZ, Ravi SILVA, Ian HAMERTON-RUSKIN, Winnie TANG, Thomas Theo STUTE
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Patent number: 8715790Abstract: A method of forming carbon nanotubes by plasma enhanced chemical vapor deposition using a carbon containing gas plasma, wherein the carbon nanotubes are not formed on a substrate at a temperature 300° C. or above.Type: GrantFiled: July 26, 2002Date of Patent: May 6, 2014Assignee: University of SurreyInventors: Sembukutiarachilage Ravi Silva, Sajad Haq, Bojan O. Boskovic
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Patent number: 8216491Abstract: A method of producing a thin film comprising uniformly dispersed carbon nanotubes, the method comprising the steps of: adapting a molecular semiconductor to make it soluble; adapting the molecular semiconductor to facilitate the formation of a high degree of molecular order and frontier orbital overlap between adjacent molecules; adapting carbon nanotubes to make them soluble; combining the soluble carbon nanotubes and the soluble molecular semiconductor in a solvent to form a solution; producing the thin film from the solution.Type: GrantFiled: July 7, 2006Date of Patent: July 10, 2012Assignee: University of SurreyInventors: Ross Andrew Hatton, Sembukutiarachilage Ravi Silva
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Publication number: 20100006152Abstract: A method of producing a photo-voltaic device comprising the steps of: synthesising carbon nanotubes; adapting the synthesised carbon nanotubes to provide a surface defect such as to create an effective band gap; selecting an organic semiconductor material which facilitates the efficient energy transfer between carbon nanotubes and the organic material, wherein the organic material is selected such that the energy band gap formed between the HOMO and LUMO energy levels lies within the effective band gap of the adapted carbon nanotubes; combining the adapted carbon nanotubes and the selected organic material to form a composite material.Type: ApplicationFiled: December 22, 2006Publication date: January 14, 2010Inventors: Ross Andrew Hatton, Sembukutiarachilage Ravi Silva, John Simon Henley
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Patent number: 7592191Abstract: A field emission backplate formed by laser crystallizing of an area of amorphous semiconductor based material. Emitter sites result from the rough surface texture caused by the crystallization process. The crystallization may be localized using laser interferometry, and profiled emitter tips grown on the localized crystalline areas. Such backplates can be used in field emission devices emitting into either a vacuum or a wide band gap light-emitting polymer. Furthermore, a backplate having self-aligned gates can be formed by depositing an insulator layer and a metal layer over the emitter tips, removing the top of the metal layer and etching away the insulator, leaving each tip surrounded by a metal rim. A planarizing agent can be used to refine this process.Type: GrantFiled: February 6, 2004Date of Patent: September 22, 2009Assignee: The University Court of the University of DundeeInventors: Mervyn John Rose, Ravi Silva, John Shannon
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Publication number: 20090166591Abstract: A method of producing a thin film comprising uniformly dispersed carbon nanotubes, the method comprising the steps of: adapting a molecular semiconductor to make it soluble; adapting the molecular semiconductor to facilitate the formation of a high degree of molecular order and frontier orbital overlap between adjacent molecules; adapting carbon nanotubes to make them soluble; combining the soluble carbon nanotubes and the soluble molecular semiconductor in a solvent to form a solution; producing the thin film from the solution.Type: ApplicationFiled: July 7, 2006Publication date: July 2, 2009Applicant: UNIVERSITY OF SURREYInventors: Ross Andrew Hatton, Sembukutiarachilage Ravi Silva
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Publication number: 20090061217Abstract: The present invention relates to a method of forming nanostructures or nanomaterials. The method comprises providing a thermal control barrier on a substrate and forming the nanostructures or nanomaterials. The method may, for example, be used to form carbon nanotubes by plasma enhanced chemical vapour deposition using a carbon containing gas plasma: The temperature of the substrate may be maintained at less than 350° C. while the carbon nanotubes are formed.Type: ApplicationFiled: May 11, 2006Publication date: March 5, 2009Applicant: SURREY NANOSYSTEMS LIMITEDInventors: Sembukutiarachilage Ravi Silva, Ben Paul Jensen, Guan Yow Chen
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Patent number: 7304420Abstract: A field emission device having improved properties and which finds use in display devices, such as a flat panel displays. Known devices and displays suffer from problems such as complexity of fabrication and limited color gamut. The present device provides a field emission backplate which is made from a substantially semiconductor based material and has a plurality of grown tips. The device also includes at least one electro-luminescent or photo-luminescent material having a fluorescent material such as a fluorescent dye doped material chemically attached thereto.Type: GrantFiled: December 17, 2004Date of Patent: December 4, 2007Assignee: The University Court of the University of DundeeInventors: Mervyn John Rose, Ravi Silva, John Shannon, Janos Peter Hajto
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Publication number: 20050179366Abstract: A field emission device having improved properties and which finds use in display devices, such as a flat panel displays. Known devices and displays suffer from problems such as complexity of fabrication and limited color gamut. The present device provides a field emission backplate which is made from a substantially semiconductor based material and has a plurality of grown tips. The device also includes at least one electro-luminescent or photo-luminescent material having a fluorescent material such as a fluorescent dye doped material chemically attached thereto.Type: ApplicationFiled: December 17, 2004Publication date: August 18, 2005Inventors: Mervyn Rose, Ravi Silva, John Shannon, Janos Hajto
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Publication number: 20040253167Abstract: A method of forming carbon nanotubes by plasma enhanced chemical vapour deposition using a carbon containing gas plasma, wherein the carbon nanotubes are not formed on a substrate at a temperature 300° C. or above.Type: ApplicationFiled: August 4, 2004Publication date: December 16, 2004Inventors: Sembukutiarachilage Ravi Silva, Sajad Haq, Bojan O. Boskovic
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Publication number: 20040197942Abstract: A field emission backplate formed by laser crystallizing of an area of amorphous semiconductor based material. Emitter sites result from the rough surface texture caused by the crystallization process. The crystallization may be localized using laser interferometry, and profiled emitter tips grown on the localized crystalline areas. Such backplates can be used in field emission devices emitting into either a vacuum or a wide band gap light-emitting polymer. Furthermore, a backplate having self-aligned gates can be formed by depositing an insulator layer and a metal layer over the emitter tips, removing the top of the metal layer and etching away the insulator, leaving each tip surrounded by a metal rim. A planarizing agent can be used to refine this process.Type: ApplicationFiled: February 6, 2004Publication date: October 7, 2004Inventors: Mervyn John Rose, Ravi Silva, John Shannon