Patents by Inventor Ravi Srivastava

Ravi Srivastava has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10380705
    Abstract: Energy modeling of target infrastructure for energy management in distributed-facilities.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: August 13, 2019
    Assignee: CARRIER CORPORATION
    Inventors: Sudipta Ghosh, Subhasis Mandal, Ravi Meghani, Rohit Srivastava
  • Patent number: 10346932
    Abstract: Energy modeling of target infrastructure for energy management in distributed-facilities.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: July 9, 2019
    Assignee: CARRIER CORPORATION
    Inventors: Sudipta Ghosh, Subhasis Mandal, Ravi Meghani, Rohit Srivastava
  • Patent number: 10311377
    Abstract: User interactions are categorized into predefined hierarchical categories by classifying user interactions, such as queries, during a user interaction session by labeling text data into predefined hierarchical categories, and building a scoring model. The scoring model is then executed on untagged user interaction data to classify the user interactions into either action-based or information-based interactions.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: June 4, 2019
    Assignee: [24]7.ai, Inc.
    Inventors: Ravi Vijayaraghavan, Vaibhav Srivastava, R. Mathangi Sri, Nitin Kumar Hardeniya
  • Publication number: 20180158723
    Abstract: Methods of lithographic patterning a dielectric layer. A first resist layer is formed on a hardmask layer, and a second resist layer is formed on the first resist layer. The second resist layer is patterned to form a first opening, which is transferred from the second resist layer to the first resist layer. The second resist layer is removed from the first resist layer after the first opening is transferred from the second resist layer to the first resist layer. The first resist layer is patterned to form a second opening laterally displaced in the first resist layer from the first opening. The first resist layer is comprised of a metal oxide photoresist that is removable selective to the hardmask layer. The hardmask layer and the dielectric layer may be subsequently patterned using first resist layer.
    Type: Application
    Filed: December 6, 2016
    Publication date: June 7, 2018
    Inventors: Ravi Srivastava, Sunil K. Singh
  • Publication number: 20150050811
    Abstract: An illustrative test structure is disclosed herein that includes a plurality of first line features and a plurality of second line features. In this embodiment, each of the second line features have first and second opposing ends and the first and second line features are arranged in a grating pattern such that the first ends of the first line features are aligned to define a first side of the grating structure and the second ends of the first features are aligned to define a second side of the grating structure that is opposite the first side of the grating structure. The first end of the second line features has a first end that extends beyond the first side of the grating structure while the second end of the second line features has a first end that extends beyond the second side of the grating structure.
    Type: Application
    Filed: October 29, 2014
    Publication date: February 19, 2015
    Inventors: Sohan Mehta, Tong Qing Chen, Vikrant Chauhan, Ravi Srivastava, Catherine Labelle, Mark Kelling
  • Patent number: 8932961
    Abstract: An illustrative test structure is disclosed herein that includes a plurality of first line features and a plurality of second line features. In this embodiment, each of the second line features have first and second opposing ends and the first and second line features are arranged in a grating pattern such that the first ends of the first line features are aligned to define a first side of the grating structure and the second ends of the first features are aligned to define a second side of the grating structure that is opposite the first side of the grating structure. The first end of the second line features has a first end that extends beyond the first side of the grating structure while the second end of the second line features has a first end that extends beyond the second side of the grating structure.
    Type: Grant
    Filed: February 13, 2012
    Date of Patent: January 13, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Sohan Mehta, Tong Qing Chen, Vikrant Chauhan, Ravi Srivastava, Catherine Labelle, Mark Kelling
  • Publication number: 20130207108
    Abstract: An illustrative test structure is disclosed herein that includes a plurality of first line features and a plurality of second line features. In this embodiment, each of the second line features have first and second opposing ends and the first and second line features are arranged in a grating pattern such that the first ends of the first line features are aligned to define a first side of the grating structure and the second ends of the first features are aligned to define a second side of the grating structure that is opposite the first side of the grating structure. The first end of the second line features has a first end that extends beyond the first side of the grating structure while the second end of the second line features has a first end that extends beyond the second side of the grating structure.
    Type: Application
    Filed: February 13, 2012
    Publication date: August 15, 2013
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Sohan Mehta, Tong Qing Chen, Vikrant Chauhan, Ravi Srivastava, Catherine Labelle, Mark Kelling
  • Patent number: 7307629
    Abstract: Domain characterization generated by Voronoi tessellation, which is very close to realistic geology and computation of gravity response of such domain, has a three dimensional fractal basin structure, and is favorable for oil exploration. Interfaces or tessellating domains are represented by a set of parameters, which are referred as Voronoi centers. These parameters can be perturbed by any amount without getting into representational problems. To accomplish such representation Voronoi tessellation is used, which in two dimensional space involves enclosing every Voronoi center by a Voronoi polygon such that the common edge of adjacent polygons is a perpendicular bisector to the line joining the Voronoi centers on both the sides of that edge. Instead of using conventional Euclidian distances, the notion of Voronoi tessellation is generalized by using Lp distances, where p can hold any real value so that Voronoi domains are not necessarily polygonal.
    Type: Grant
    Filed: March 31, 2004
    Date of Patent: December 11, 2007
    Assignee: Council of Scientific and Industrial Research
    Inventors: Ravi Srivastava, V. Dimri