Abstract: A photovoltaic device with increased efficiency and a method for making the same. The present invention provides a photovoltaic device including: a transparent substrate; a transparent conductive electrode layer disposed on the transparent substrate; an n-type layer disposed on the transparent conductive electrode layer; a chalcogen absorber layer disposed on the n-type layer; a p-type molybdenum trioxide (MoO3) interlayer disposed on the chalcogen absorber layer; and a conductive layer disposed on the interlayer. A photovoltaic device having a superstrate configuration with the order of the layers reversed is also provided. The present invention further provides methods for making the photovoltaic devices according to the present invention.

Abstract: Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

Abstract: Techniques for forming an ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO2, ZnO, SnO, ZnSnO, Ga2O3, and combinations thereof. A photovoltaic device is also provided.

Abstract: Techniques for forming an ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO2, ZnO, SnO, ZnSnO, Ga2O3, and combinations thereof. A photovoltaic device is also provided.

Abstract: Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

Abstract: Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

Abstract: Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

Abstract: After forming a layer of a Cu-deficient kesterite compound having the formula Cu2-xZn1+xSn(SySe1-y)4, wherein 0<x<1, and 0?y?1, on a substrate and forming a Ag layer on the Cu-deficient kesterite compound layer, the Cu-deficient kesterite compound layer and Ag layer are annealed in a S- and/or Se-rich ambient to provide a film containing a Ag—Cu mixed kesterite compound having the formula AgxCu2-xZnSn(SySe1-y)4, wherein 0<x<2, and 0?y?1.

Abstract: A photovoltaic device with an improved n-type partner and a method for making the same. The device includes: a transparent substrate; a transparent conductive electrode layer disposed on the transparent substrate; an n-type layer of Zn1-xMgxO, wherein 0<x?1, disposed on the transparent conductive electrode layer; a chalcogen absorber layer disposed on the n-type layer; and a conductive layer disposed on the chalcogen absorber layer. The method includes: forming a transparent conductive electrode layer on a transparent substrate; forming an n-type layer of Zn1-xMgxO, wherein 0<x?1, on the transparent conductive electrode layer; forming a chalcogen absorber layer on the n-type layer; forming a conductive layer on the chalcogen absorber layer; and annealing to form the device. Another device having a superstrate configuration with the order of the layers reversed and a method for making the same is provided.

Abstract: A photovoltaic device with increased efficiency and a method for making the same. The present invention provides a photovoltaic device including: a transparent substrate; a transparent conductive electrode layer disposed on the transparent substrate; an n-type layer disposed on the transparent conductive electrode layer; a chalcogen absorber layer disposed on the n-type layer; a p-type molybdenum trioxide (MoO3) interlayer disposed on the chalcogen absorber layer; and a conductive layer disposed on the interlayer. A photovoltaic device having a superstrate configuration with the order of the layers reversed is also provided. The present invention further provides methods for making the photovoltaic devices according to the present invention.

Abstract: Techniques for forming an ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO2, ZnO, SnO, ZnSnO, Ga2O3, and combinations thereof. A photovoltaic device is also provided.