Abstract: An on-chip temperature sensor for an integrated circuit includes in one embodiment a voltage/current source circuit that provides a reference voltage and a current. A sense signal circuit receives the current of the voltage/current source circuit and provides a sense signal corresponding to the temperature of the integrated circuit. A reference signal receives the reference voltage of the voltage/current source circuit and provides a reference signal having a selectable value. A comparator compares the sense signal of the sense signal circuit to the selectable reference signal of the reference signal circuit and provides a temperature sensor output signal.

Abstract: Systems and methods disclosed herein provide temperature monitoring within an integrated circuit. For example, in accordance with an embodiment of the present invention, a bandgap reference circuit provides a reference voltage; a constant current generator provides a constant current; and a reference signal circuit receives the reference voltage and provides a reference signal having a selectable value based on the reference voltage. A bipolar diode receives the constant current and provides a sense signal, with a value of the sense signal corresponding approximately to a temperature value of the integrated circuit. A comparator receives the sense signal and the reference signal and provides a temperature sensor output signal.

Abstract: In one embodiment, a (negative-voltage) charge pump with one or more stages that receives a (high) input voltage and generates a higher-magnitude (negative) output voltage. Each stage has two capacitors for storing charges and two branches that alternate to transmit a higher-magnitude output voltage at every clock half cycle. Each branch has a PMOS transistor and a NMOS transistor. To reduce the effects of back body from the substrate, two transistors are constructed with three wells and two with four wells, where the number of wells per device is dependent upon the substrate type used.

Abstract: A programmable logic device in accordance with an embodiment of the invention includes configurable logic blocks, embedded random access memory (RAM) blocks, and input/output blocks adapted to transfer information into or out of the programmable logic device. An interconnect architecture is adapted to route information among the configurable logic blocks, embedded RAM blocks, and input/output blocks within the programmable logic device. An interface block is provided that couples an embedded RAM block and an input/output block but not a logic block to the interconnect architecture.

Abstract: In accordance with an embodiment of the present invention, a programmable logic device includes a memory adapted to store information in the programmable logic device, an input/output circuit adapted to transfer information into or out of the programmable logic device, and an interconnect architecture adapted to route information within the programmable logic device. An interface circuit is provided to couple the memory and the input/output circuit to the interconnect architecture.

Abstract: In one embodiment, a (negative-voltage) charge pump with one or more stages that receives a (high) input voltage and generates a higher-magnitude (negative) output voltage. Each stage has two capacitors for storing charges and two branches that alternate to transmit a higher-magnitude output voltage at every clock half cycle. Each branch has a PMOS transistor and a NMOS transistor. To reduce the effects of back body from the substrate, two transistors are constructed with three wells and two with four wells, where the number of wells per device is dependent upon the substrate type used.

Abstract: A wide input programmable logic system includes a plurality of logic gates that receive a plurality of row driver signals and memory cell outputs to generate a plurality of logical NOR or NAND outputs for their respective one of said row driver signals and memory cell outputs that are programmed. At least one additional stage of logic gates having a plurality of logical NAND or NOR gates receive the respective logical NOR or NAND outputs and generate a plurality of respective logical NAND or NOR outputs. At least one respective logical NOR or NAND gate receives the respective plurality of logical NAND or NOR outputs and generates an output term. The memory cell may include an electrically erasable non-volatile memory cell having a storage cell that stores a logical value and a select transistor coupled to the storage cell.

Abstract: A wide input programmable logic system includes a plurality of logic gates that receive a plurality of row driver signals and memory cell outputs to generate a plurality of logical NOR or NAND outputs for their respective one of said row driver signals and memory cell outputs that are programmed. At least one additional stage of logic gates having a plurality of logical NAND or NOR gates receive the respective logical NOR or NAND outputs and generate a plurality of respective logical NAND or NOR outputs. At least one respective logical NOR or NAND gate receives the respective plurality of logical NAND or NOR outputs and generates an output term. The memory cell may include an electrically erasable non-volatile memory cell having a storage cell that stores a logical value and a select transistor coupled to the storage cell.

Abstract: A CMOS Schmitt Trigger circuit design provides a relatively high speed device having a tight, substantially monotonic hysteresis characteristic which is substantially independent of fabrication process parameters and can be used with relatively wide power supply designs, including operating a relatively low Vcc. Tight trip point variation is maintained in conjunction with process, voltage, and temperature changes. The circuit is adaptable for forming an integrated circuit buffer element.

Abstract: A sense amplifier is provided that mitigates the effect of threshold voltage mismatch within the sense amplifier. The sense amplifier has an inverter pair coupled to the input terminals, with a resistive element coupled across output terminals of the inverter pair. Inverter gain stages following the inverter pair are coupled to a current limiting circuit to monitor and limit the current flowing through the inverter gain stage immediately following the inverter pair. The current limiting circuit allows the sense amplifier to be biased such that speed is improved while limiting power dissipation to acceptable levels, even under undesirable process, temperature, and power supply variations.

Abstract: A high voltage CMOS switch circuit having an arrangement of device connections such that the individual transistor devices are substantially the same size, improving performance while reducing size and providing breakdown protection. The circuit switches a high voltage to the output based on a low voltage input. The circuit is ratio-less and self-biased, capable of operating a very low supply voltage compared to the state of the art.