Abstract: Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods comprise delivering at least one precursor and an oxygen-free co-reactant, such as hydrazine or alkylhydrazine, to a substrate to form a ruthenium-containing film, wherein the at least one precursor corresponds in structure to Formula (I): (L)Ru(CO)3, wherein L is selected from the group consisting of a linear or branched C2-C6-alkenyl and a linear or branched C1-C6-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C2-C6-alkenyl, C1-C6-alkyl, alkoxy and NR1R2; wherein R1 and R2 are independently alkyl or hydrogen; and annealing the ruthenium-containing film under vacuum or in the presence of an inert gas such as Ar, N2, or a reducing gas such as H2 or a combination thereof.

Abstract: A thermal atomic layer deposition method for selectively deposition of silicon and oxygen containing dielectric film selected from silicon oxide or carbon doped silicon oxide abundantly on a dielectric surface but not less on a metal surface employing a silicon precursor having at least three isocyanato ligands.

Abstract: The disclosed and claimed subject matter relates to thermal ALE processing of metal oxide films using one or more fluorinating agent and one or more chlorinating agent.

Abstract: Methods of forming ruthenium-containing films by pulsed chemical vapor deposition are provided. The methods include at least one deposition cycle. The deposition cycle includes pulsing a zerovalent Ru precursor with a carrier gas in the absence of a co-reactant onto a surface of a substrate, and delivering a purge gas to the surface of the substrate.

Abstract: A method of forming a conformal layer including TiN in a via includes introducing a precursor into a reaction chamber according to a first exposure schedule. The precursor includes non-halogenated metal-organic titanium. The first exposure schedule indicates precursor exposure periods. Each precursor exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the precursor during the particular duration of time. The method includes introducing a co-reactant into the reaction chamber according to a second exposure schedule. The co-reactant includes nitrogen. The second exposure schedule indicates co-reactant exposure periods. Each co-reactant exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the co-reactant during the particular duration of time. The method includes providing the conformal layer including TiN in the via based on said introducing the precursor and the co-reactant.

Abstract: Described are low resistivity metal layers/films, such as low resistivity ruthenium (Ru) layers/films, and methods of forming low resistivity metal films. Ru layers/films with close-to-bulk resistivity can be prepared on substrates using Ru(CpEt)2 + O2 ALD, as well as a two-step ALD process using Ru(DMBD)(CO)3 + TBA (tertiary butyl amine) to nucleate the substrate and Ru(EtCp)2 + O2 to increase layer/film thickness. The Ru layer/films and methods of preparing Ru layers/films described herein may be suitable for use in barrierless via-fills, as well as at M0/M1 interconnect layers.

Abstract: Methods of forming metal-containing films are provided. The methods include forming a blocking layer, for example, on a first substrate surface, by a first deposition process and forming the metal-containing film, for example, on a second substrate surface, by a second deposition process.

Abstract: The disclosed and claimed subject matter relates to crystalline ferroelectric materials that include a mixture of hafnium oxide and zirconium oxide having a substantial (i.e., approximately 40% or more) or majority portion of the material in a ferroelectric phase as deposited (i.e., without the need for further processing, such as a subsequent capping or annealing) and methods for preparing and depositing these materials.

Abstract: Compounds for selectively forming metal-containing films are provided. Methods of forming metal-containing films are also provided. The methods include forming a blocking layer, for example, on a first substrate surface, by a first deposition process and forming the metal-containing film, for example, on a second substrate surface, by a second deposition process.

Abstract: The present inventive concept relates to selective metal layer deposition. Embodiments include a method for atomic layer deposition (ALD) of a metal, the method comprising at least one cycle of: a) exposing a substrate, the substrate comprising a surface comprising a metal portion and an insulator portion, to a metal-organic precursor; b) depositing a metal-organic precursor on an upper surface of the metal portion of the substrate to selectively provide a metal precursor layer on the upper surface of the metal portion of the substrate; c) exposing the metal precursor layer to a co-reactant; and d) depositing the co-reactant on the metal precursor layer, wherein the co-reactant takes part in a ligand exchange with the metal precursor layer.

Abstract: Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods comprise delivering at least one precursor and an oxygen-free co-reactant, such as hydrazine or alkylhydrazine, to a substrate to form a ruthenium-containing film, wherein the at least one precursor corresponds in structure to Formula (I): (L)Ru(CO)3, wherein L is selected from the group consisting of a linear or branched C2-C6-alkenyl and a linear or branched C1-C6-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C2-C6-alkenyl, C1-C6-alkyl, alkoxy and NR1R2; wherein R1 and R2 are independently alkyl or hydrogen; and annealing the ruthenium-containing film under vacuum or in the presence of an inert gas such as Ar, N2, or a reducing gas such as H2 or a combination thereof.