Abstract: A bipolar transistor with a SiGe:C film and a seed layer forming beneath the SiGe:C film and methods of making same. The method includes placing a substrate in a reactor chamber and introducing a silicon source gas into the reactor chamber to form a silicon seed layer. The reactor chamber is maintained at a pressure below 45 Torr and a temperature between about 700° C. and 850° C. After the seed layer is formed, the silicon source gas is stopped. The reactor chamber is then simultaneously adjusted to a pressure between about 70 Torr and 90 Torr and a temperature between about 600° C. and 650° C. The silicon source gas, a germanium source gas, and a carbon source gas are introduced to form the SiGe:C film on the seed layer.

Abstract: Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.

Abstract: A bipolar transistor and its fabrication are described. The extrinsic base region is formed by growing a second, more heavily doped, epitaxial layer over a first epitaxial layer. The second layer extends under, and is insulated from, an overlying polysilicon emitter pedestal.

Abstract: Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.

Abstract: Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.

Abstract: A bipolar transistor and its fabrication are described. The extrinsic base region is formed by growing a second, more heavily doped, epitaxial layer over a first epitaxial layer. The second layer extends under, and is insulated from, an overlying polysilicon emitter pedestal.

Abstract: Transistors are manufactured by growing germanium source and drain regions, implanting dopant impurities into the germanium, and subsequently annealing the source and drain regions so that the dopant impurities diffuse through the germanium. The process is simpler than a process wherein germanium is insitu doped with p-type or n-type impurities. The dopant impurities diffuse easily through the germanium but not easily through underlying silicon, so that an interface between the germanium and silicon acts as a diffusion barrier and ensures positioning of the dopant atoms in the regions of the device where they improve transistor performance.

Abstract: A method for forming a base of a bipolar transistor. A narrow base is formed using a flash of boron doping gas in a reaction chamber to create a narrow base with high boron concentration. This method allows for reliable formation of a base with high boron concentration while maintaining manageability in controlling deposition of other materials in a substrate.

Abstract: Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.

Abstract: A bipolar transistor and its fabrication are described. The extrinsic base region is formed by growing a second, more heavily doped, epitaxial layer over a first epitaxial layer. The second layer extends under, and is insulated from, an overlying polysilicon emitter pedestal.

Abstract: Transistors are manufactured by growing germanium source and drain regions, implanting dopant impurities into the germanium, and subsequently annealing the source and drain regions so that the dopant impurities diffuse through the germanium. The process is simpler than a process wherein germanium is insitu doped with p-type or n-type impurities. The dopant impurities diffuse easily through the germanium but not easily through underlying silicon, so that an interface between the germanium and silicon acts as a diffusion barrier and ensures positioning of the dopant atoms in the regions of the device where they improve transistor performance.

Abstract: Transistors are manufactured by growing germanium source and drain regions, implanting dopant impurities into the germanium, and subsequently annealing the source and drain regions so that the dopant impurities diffuse through the germanium. The process is simpler than a process wherein germanium is insitu doped with p-type or n-type impurities. The dopant impurities diffuse easily through the germanium but not easily through underlying silicon, so that an interface between the germanium and silicon acts as a diffusion barrier and ensures positioning of the dopant atoms in the regions of the device where they improve transistor performance.

Abstract: A bipolar transistor with a SiGe:C film and a seed layer forming beneath the SiGe:C film and methods of making same. The method includes placing a substrate in a reactor chamber and introducing a silicon source gas into the reactor chamber to form a silicon seed layer. The reactor chamber is maintained at a pressure below 45 Torr and a temperature between about 700° C. and 850° C. After the seed layer is formed, the silicon source gas is stopped. The reactor chamber is then simultaneously adjusted to a pressure between about 70 Torr and 90 Torr and a temperature between about 600° C. and 650° C. The silicon source gas, a germanium source gas, and a carbon source gas are introduced to form the SiGe:C film on the seed layer.

Abstract: A composite of germanium film for a semiconductor device and methods of making the same. The method comprises growing a graded germanium film on a semiconductor substrate in a deposition chamber while simultaneously decreasing a deposition temperature and decreasing a silicon source gas and increasing a germanium source gas over a predetermined amount of time. The graded germanium film comprises an ultra-thin silicon-germanium buffer layer and a germanium film.

Abstract: A method for forming a base of a bipolar transistor. A narrow base is formed using a flash of boron doping gas in a reaction chamber to create a narrow base with high boron concentration. This method allows for reliable formation of a base with high boron concentration while maintaining manageability in controlling deposition of other materials in a substrate.

Abstract: Transistors are manufactured by growing germanium source and drain regions, implanting dopant impurities into the germanium, and subsequently annealing the source and drain regions so that the dopant impurities diffuse through the germanium. The process is simpler than a process wherein germanium is insitu doped with p-type or n-type impurities. The dopant impurities diffuse easily through the germanium but not easily through underlying silicon, so that an interface between the germanium and silicon acts as a diffusion barrier and ensures positioning of the dopant atoms in the regions of the device where they improve transistor performance.

Abstract: A composite of germanium film for a semiconductor device and methods of making the same. The method comprises growing a graded germanium film on a semiconductor substrate in a deposition chamber while simultaneously decreasing a deposition temperature and decreasing a silicon source gas and increasing a germanium source gas over a predetermined amount of time. The graded germanium film comprises an ultra-thin silicon-germanium buffer layer and a germanium film.

Abstract: A composite of germanium film for a semiconductor device and methods of making the same. The method comprises growing a graded germanium film on a semiconductor substrate in a deposition chamber while simultaneously decreasing a deposition temperature and decreasing a silicon source gas and increasing a germanium source gas over a predetermined amount of time. The graded germanium film comprises an ultra-thin silicon-germanium buffer layer and a germanium film.