Abstract: The present invention discloses a method for preparation of a hybrid comprising magnetite nanoparticles and carbon nitride nanotubes, comprising: preparing carbon nitride nanotubes by plasma chemical vapor deposition (CVD); dissolving the prepared carbon nitride nanotubes in triethyleneglycol to form solution and adding Fe (acetylacetonate)3 to the solution to obtain a mixture; and heating and cooling the mixture to form a hybrid comprising magnetite nanoparticles and carbon nitride nanotubes, in which the carbon nitride nanotubes are doped with magnetite nanoparticles.

Abstract: The present invention discloses a method for preparation of a hybrid comprising magnetite nanoparticles and carbon nitride nanotubes, comprising: preparing carbon nitride nanotubes by plasma chemical vapor deposition (CVD); dissolving the prepared carbon nitride nanotubes in triethyleneglycol to form solution and adding Fe (acetylacetonate)3 to the solution to obtain a mixture; and heating and cooling the mixture to form a hybrid comprising magnetite nanoparticles and carbon nitride nanotubes, in which the carbon nitride nanotubes are doped with magnetite nanoparticles.

Abstract: A voltage-controlled magnetization reversal writing type Magnetic Random Access Memory (MRAM) device. The MRAM device includes electrically conductive base electrodes, a piezoelectric layer, an insulation layer, a free ferromagnetic layer, a nonmagnetic layer, a pinned ferromagnetic layer, an antiferromagnetic layer and two electrically conductive reading lines. The electrically conductive base electrodes are provided with two writing lines having positive and negative electrodes. The left and right surfaces of piezoelectric layer are disposed to abut the writing lines of the electrically conductive base electrodes, respectively. The insulation layer is disposed beneath the piezoelectric layer and is formed to separate the positive and negative electrodes. The free ferromagnetic layer is disposed on the insulation layer. The nonmagnetic layer is disposed on the free ferromagnetic layer. The pinned ferromagnetic layer is disposed on the nonmagnetic layer.

Abstract: A voltage-controlled magnetization reversal writing type Magnetic Random Access Memory (MRAM) device. The MRAM device includes electrically conductive base electrodes, a piezoelectric layer, an insulation layer, a free ferromagnetic layer, a nonmagnetic layer, a pinned ferromagnetic layer, an antiferromagnetic layer and two electrically conductive reading lines. The electrically conductive base electrodes are provided with two writing lines having positive and negative electrodes. The left and right surfaces of piezoelectric layer are disposed to abut the writing lines of the electrically conductive base electrodes, respectively. The insulation layer is disposed beneath the piezoelectric layer and is formed to separate the positive and negative electrodes. The free ferromagnetic layer is disposed on the insulation layer. The nonmagnetic layer is disposed on the free ferromagnetic layer. The pinned ferromagnetic layer is disposed on the nonmagnetic layer.