Patents by Inventor Ravis H. Sundaresan

Ravis H. Sundaresan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making back gate contact for silicon on insulator technology
    Patent number: 5610083
    Abstract: A process for creating a back gate contact, in an SOI layer, that can easily be incorporated into a MOSFET fabrication recipe, has been developed. The back gate contact consists of a etched trench, lined with insulator, and filled with doped polysilicon. The polysilicon filled trench electrically connects the semiconductor substrate to overlying metal contacts.
    Type: Grant
    Filed: May 20, 1996
    Date of Patent: March 11, 1997
    Assignee: Chartered Semiconductor Manufacturing Pte LTD
    Inventors: Lap Chan, Ravis H. Sundaresan, Che-Chia Wei