Patents by Inventor Ray Duffy

Ray Duffy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low resistance contacts for semiconductor devices
    Patent number: 9607858
    Abstract: The invention provides a method of forming at least one Metal Germanide contact on a substrate for providing a semiconducting device (100) by providing a first layer (120) of Germanium (Ge) and a second layer of metal. The invention provides a step of reacting the second layer with the first layer with high energy density pulses for obtaining a Germanide metal layer (160A) having a substantially planar interface with the underlying first (Ge) layer.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: March 28, 2017
    Assignees: Laser Systems & Solutions of Europe (LASSE) Screen Semiconductor Solutions Co. Ltd., University College Cork—National University of Ireland, Cork
    Inventors: Ray Duffy, Maryam Shayesteh, Karim Huet
  • PROCESS FOR MOLECULAR LAYER DOPING OF GERMANIUM SUBSTRATES
    Publication number: 20160240381
    Abstract: A method of molecular layer doping of a germanium substrate comprises the steps of cleaning a surface of the germanium substrate to remove oxides, reacting the cleaned surface with a dopant solution comprising dopant material and a suitable solvent for the dopant at low temperature for a suitable period of time while irradiating the substrate with UV light, and thermal annealing of the germanium substrate.
    Type: Application
    Filed: February 12, 2016
    Publication date: August 18, 2016
    Inventors: Brenda Long, Justin Holmes, Ray Duffy
  • IMPROVED LOW RESISTANCE CONTACTS FOR SEMICONDUCTOR DEVICES
    Publication number: 20150364561
    Abstract: The invention provides a method of forming at least one Metal Germanide contact on a substrate for providing a semiconducting device (100) by providing a first layer (120) of Germanium (Ge) and a second layer of metal. The invention provides a step of reacting the second layer with the first layer with high energy density pulses for obtaining a Germanide metal layer (160A) having a substantially planar interface with the underlying first (Ge) layer.
    Type: Application
    Filed: January 30, 2014
    Publication date: December 17, 2015
    Inventors: Ray Duffy, Maryam Shayesteh, Karim Huet