Abstract: Plasma beam apparatus and method for the purpose of vacuum processing temperature sensitive materials at high discharge power and high processing rates. A gridless, closed or non-closed Hall-Current ion source is described which features a unique fluid-cooled anode with a shadowed gap through which ion source feed gases are introduced while depositing feed gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. Thin vacuum gaps are also used between anode and non-anode components in order to preserve electrical isolation of the anode when depositing conductive coatings. The magnetic field of the Hall-Current ion source is produced by an electromagnet driven either by the discharge current or a periodically alternating current.

Abstract: An ion beam deposition method is provided for manufacturing a coated substrate with improved wear-resistance, and improved lifetime. The substrate is first chemically cleaned to remove contaminants. Secondly, the substrate is inserted into a vacuum chamber onto a substrate holder, and the air therein is evacuated via pump. Then the substrate surface is bombarded with energetic ions from an ion beam source supplied from inert or reactive gas inlets to assist in removing residual hydrocarbons and surface oxides, and activating the surface. After sputter-etching the surface, a protective, wear-resistant coating is deposited by plasma ion beam deposition where a portion of the precursor gases are introduced into the ion beam downstream of the ion source, and hydrogen is introduced directly into the ion source plasma chamber. The plasma ion beam-deposited coating may contain one or more layers.