Abstract: Various embodiments of systems and methods allow a tool inventory device and associated system. A user can retrieve and return tools and such interactions can be monitored by the system. The inventory device can be an add-on to a standalone tool cabinet and can provide this extra functionality. The inventory device can have a camera looking at the drawers and can use computer vision to determine when tools are retrieved and/or replaced.

Abstract: Various embodiments of systems and methods allow a tool inventory device and associated system. A user can retrieve and return tools and such interactions can be monitored by the system. The inventory device can be an add-on to a standalone tool cabinet and can provide this extra functionality. The inventory device can have a camera looking at the drawers and can use computer vision to determine when tools are retrieved and/or replaced.

Abstract: A drug therapy elution system and method for treating blood vessels. The system includes an enclosed receptacle containing the drug therapy for treating the damaged blood vessel. The system also includes one or more conduits that permit elution of the drug therapy from the enclosed receptacle into the damaged blood vessel wall. The system also includes one or more fixation mechanisms that can secure the enclosed receptacle to the blood vessel wall.

Abstract: A dry etch process is described for selectively etching silicon nitride from conductive oxide material for use in a semiconductor fabrication process. Adding an oxidant in the etch gas mixture could increase the etch rate for the silicon nitride while reducing the etch rate for the conductive oxide, resulting in improving etch selectivity. The disclosed selective etch process is well suited for ferroelectric memory device fabrication using conductive oxide/ferroelectric interface having silicon nitride as the encapsulated material for the ferroelectric.

Abstract: A method of low-temperature oxidation of a silicon substrate includes placing a silicon wafer in a vacuum chamber; maintaining the silicon wafer at a temperature of between about room temperature and 400° C.; introducing an oxidation gas in the vacuum chamber; dissociating the oxidation gas into O(1D) radical oxygen and irradiating the surface of the silicon wafer with a xenon excimer lamp generating light at a wavelength of about 172 nm to eject electrons from the surface of the silicon wafer and forming the reactive oxidizing species over the silicon wafer; and forming an oxide layer on at least a portion of the silicon wafer.