Patents by Inventor Ray J.E. Hueting

Ray J.E. Hueting has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bipolar transistor with lateral emitter and collector and method of production
    Patent number: 9306017
    Abstract: A bipolar transistor includes a substrate of semiconductor material, a high-mobility layer in the substrate, and a donor layer adjacent to the high-mobility layer. An emitter terminal forms an emitter contact on the donor layer, and a collector terminal forms a collector contact on the donor layer. A base terminal is electrically conductively connected with the high-mobility layer. The transistor can be produced in a HEMT technology or BiFET technology in GaAs.
    Type: Grant
    Filed: May 17, 2012
    Date of Patent: April 5, 2016
    Assignee: EPCOS AG
    Inventors: Léon C. M. van den Oever, Ray J. E. Hueting
  • Bipolar Transistor with Lateral Emitter and Collector and Method of Production
    Publication number: 20120273760
    Abstract: A bipolar transistor includes a substrate of semiconductor material, a high-mobility layer in the substrate, and a donor layer adjacent to the high-mobility layer. An emitter terminal forms an emitter contact on the donor layer, and a collector terminal forms a collector contact on the donor layer. A base terminal is electrically conductively connected with the high-mobility layer. The transistor can be produced in a HEMT technology or BiFET technology in GaAs.
    Type: Application
    Filed: May 17, 2012
    Publication date: November 1, 2012
    Applicant: EPCOS AG
    Inventors: Lcon C.M. van den Oever, Ray J.E. Hueting