Abstract: A quantum-dot light emitting diode includes, in sequential order from bottom to top, a LED light source, a quantum-dot photoresist layer and a barrier layer. The quantum-dot photoresist layer has a thickness lower than 20 ?m and is formed by specific material, so as to decrease a step difference between the quantum-dot photoresist layer and a light exit surface of the LED light source, to improve coating property of the barrier material and make sure that the coating of the barrier material can be implemented by dry coating or wet coating; the barrier material is not easy to crack to cause air leakage and oxidation because of thermal expansion and contraction, so as to increase the success rate of side packaging and the reliability of the process, and extend the reliability of the material.

Abstract: The subject invention relates to a process for the production of a sorbent for SO.sub.2 comprising mixing a source of Ca.sub.3 SiO.sub.5 admixed with about 3 % of a compound such as CaSO.sub.4 2 H.sub.2 O that facilitates the conversion of the Ca.sub.3 SiO.sub.5 to the desired product, or Ca.sub.2 SiO.sub.4, or both the mixture and Ca.sub.2 SiO.sub.4 with an excess of water; adding milling media to the mixture; and, agitating the mixture including the milling media for from about 1 hour to about 96 hours at a temperature of about ambient temperature to about 85.degree. C., such that a finely divided sorbent including C--S--H and Ca(OH).sub.2 as its main active components is formed.The invention further relates to the foregoing process wherein the source of Ca.sub.3 SiO.sub.5 admixed with about 3 % of a compound such as CaSO.sub.4.2 H.sub.2 O that facilitates the conversion of the Ca.sub.3 SiO.sub.5 to the desired product, or Ca.sub.2 SiO.sub.4, or both the mixture and Ca.sub.2 SiO.sub.