Abstract: The invention provides a composite substrate, a semiconductor device including such composite substrate, and a method of making the same. In particular, the composite substrate of the invention includes a nitride-based single crystal layer transformed from a nitride-based poly-crystal layer, which has a specific thickness of approximately between 2 nm and 100 nm.

Abstract: The invention provides a composite substrate, a semiconductor device including such composite substrate, and a method of making the same. In particular, the composite substrate of the invention includes a nitride-based single crystal layer transformed from a nitride-based poly-crystal layer, which has a specific thickness of approximately between 2 nm and 100 nm.

Abstract: The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere.

Abstract: The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere.

Abstract: The present invention discloses a method for fabricating gallium nitride(GaN)-based compound semiconductors. Particularly, this invention relates to a method of forming a transition layer on a zinc oxide (ZnO)-based semiconductor layer by the steps of forming a wetting layer and making the wetting layer nitridation. The method not only provides a function of protecting the ZnO-based semiconductor layer, but also uses the transition layer as a buffer layer for a following epitaxial growth of a GaN-based semiconductor layer, and thus, the invention may improve the crystal quality of the GaN-based semiconductor layer effectively.

Abstract: An oxidized low density lipoprotein sensing device for a gallium nitride process is a GaN HEMT device including: a gateless AlGaN/GaN sensing transistor device, a testing window, a source, a drain, two metal connecting wires and a passivation layer. The gateless AlGaN/GaN sensing transistor device has an epitaxial wafer structure including a GaN layer and an aluminum gallium nitride layer. The testing window is disposed on the epitaxial wafer structure. The metal connecting wire is disposed on a source and a drain. The passivation layer is covered onto a surface of the sensing device except the testing window. A built-in piezoelectric field is created by the properties of FET and the polarization effect of AlGaN/GaN to achieve the effect of sensing the level of oxidizing proteins in human body quickly, accurately and easily.

Abstract: The present invention is a method for obtaining a better color rendering with a photoluminescence plate, and the better color rendering is obtained by using UV radiating on the photoluminescence plate stacked with a red photoluminescence plate, a green photoluminescence plate and a blue photoluminescence plate. Therefore, the color rendering is above 90% and close to the solar light. The photoluminescence plate can be made from directly coated with photoluminescence layers of three colors or with fully mixed fluorescent materials of three colors. Consequently, a white light relied on the present invention is more uniform than the conventional techniques with a color mixing performance based on tricolor LEDs.

Abstract: The invention is set for connecting L.E.D., bridging rectifier and AC/DC power transformer by using series connection method, also the main purpose is for saving energy and reducing the cost of electronic components. The first apparatus is built by first bridge rectifier, first L.E.D. group and first current-limiting resistor using the series connection method. The second apparatus is built by second bridge rectifier, second L.E.D. group and second current-limiting resistor using the series connection method. Then, finally the previous two apparatus will be connected each other by using parallel connection method to the AC/DC power source.

Abstract: A method for enhance lightness of p-type nitride group compound L.E.D. is disclosed. The present invention, firstly, the p-type GaN semiconductor layer is provided, then, the different thickness and coverage for titanium metal are coated on the p-type GaN semiconductor layer. Next, the activation process is carried out in the heating tube under the nitrogen gas and quite high temperature, about certain minutes. Finally, The titanium metal is removed after the activation process, therefore the carrier concentration can be selectively changed, in order to enhance lightness for p-type nitride group compound L.E.D.

Abstract: The present invention is a method for obtaining a better color rendering with a photoluminescence plate, and the better color rendering is obtained by using UV radiating on the photoluminescence plate stacked with a red photoluminescence plate, a green photoluminescence plate and a blue photoluminescence plate. Therefore, the color rendering is above 90% and close to the solar light. The photoluminescence plate can be made from directly coated with photoluminescence layers of three colors or with fully mixed fluorescent materials of three colors. Consequently, a white light relied on the present invention is more uniform than the conventional techniques with a color mixing performance based on tricolor LEDs.

Abstract: This invention relates to a multiplexer with a DWDM function, mainly comprising two modules, and an optic fiber is linked between said two modules, in which several filters and reflection mirrors, inclined slabs, laser diodes, receiver, and optical detectors detecting reflection light are provided in each module; thereby, many groups of optic signals may be mutually transmitted in a line of optic fiber at the same time so that the volume of mutually transmitted signals may multiplies under the condition of no extra paved optic fibers required, and in order to effectively detect the variations of laser for promotion of the stability of the module, the laser diode and the optic detector are further located in a predetermined site and the inclined slab is used to draw the reflection light of the laser to the nearby optic detector detecting the reflection light.

Abstract: This invention relates to a multiplexer with a DWDM function, mainly comprising two modules, and an optic fiber is linked between said two modules, in which several filters and reflection mirrors, inclined slabs, laser diodes, receiver, and optical detectors detecting reflection light are provided in each module; thereby, many groups of optic signals may be mutually transmitted in a line of optic fiber at the same time so that the volume of mutually transmitted signals may multiplies under the condition of no extra paved optic fibers required, and in order to effectively detect the variations of laser for promotion of the stability of the module, the laser diode and the optic detector are further located in a predetermined site and the inclined slab is used to draw the reflection light of the laser to the nearby optic detector detecting the reflection light.

Abstract: A shaver includes a base portion with two shafts rotatably extending from a top surface of the base portion and each shaft has a blade unit mounted thereto. A plurality of light emitting members are located on the top surface of the base portion and around the at least one shaft. Each light emitting member emits a certain length of wave such as ultra violet ray toward the blade units so as to kill germs attached on the blade units.

Abstract: A light emitting tooth brush having whitening and sterilizing effects includes a handle having one end provided with a light permeable brush head, a control switch mounted in the handle, and a circuit board mounted in the brush head. The circuit board is electrically connected to the control switch, and is provided with a light emitting member which may emit optical waves having a specified wavelength through the light permeable brush head. Thus, the light emitting tooth brush may achieve the sterilizing effect and may achieve the effect of cleaning and whitening the user's teeth.

Abstract: A fever relief device includes body in which a thermoelectric cooler is received and the assembly of the body and the cooler is conveniently mounted to the head of the user who may adjust the direct current to control the temperature of the cooler so as to relieve the fever.

Abstract: A light emitting tooth brush having whitening and sterilizing effects includes a handle having one end provided with a light permeable brush head, a control switch mounted in the handle, and a circuit board mounted in the brush head. The circuit board is electrically connected to the control switch, and is provided with a light emitting member which may emit optical waves having a specified wavelength through the light permeable brush head. Thus, the light emitting tooth brush may achieve the sterilizing effect and may achieve the effect of cleaning and whitening the user's teeth.