Abstract: There is provided a hitch trainer. The hitch trainer may include a base member that can be removably connected to a trailer hitch or wall mounted receptacle, and a top member with an integrated pull-up bar. The vertical length of the shaft of the hitch trainer may be extended by the insertion of one or more mid-members. Pairs of band pegs may be attached to either side of each of the base, top and mid-members, allowing the hitch trainer to anchor exercise bands for use in resistance training. The integrated pull-up bar may be used for body weight exercises such as pull-ups or dips. As the top, base, and mid-members are slidably attached to one another, they can be unattached such that the entire hitch trainer can be stored in a compact manner.

Abstract: A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots covered by a spacer layer with strained areas extending there through. The spacer layer then forms a template upon which quantum dots of an active layer may be formed with a surface with a surface density and formation that is influenced by the underlying first layer of quantum dots. This allows a choice of growth parameters more favourable to the formation of quantum dots in the active layer emitting at long wavelengths with a narrow inhomogeneous broadening. As an example, the active layer of quantum dots may be formed at a lower temperature than the first layer of quantum dots.

Abstract: A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots covered by a spacer layer with strained areas extending there through. The spacer layer then forms a template upon which quantum dots of an active layer may be formed with a surface with a surface density and formation that is influenced by the underlying first layer of quantum dots. This allows a choice of growth parameters more favourable to the formation of quantum dots in the active layer emitting at long wavelengths with a narrow inhomogeneous broadening. As an example, the active layer of quantum dots may be formed at a lower temperature than the first layer of quantum dots.