Abstract: The present disclosure generally relates to the combination of MEMS intrinsic technology with specifically designed solid state ESD protection circuits in state of the art solid state technology for RF applications. Using ESD protection in MEMS devices has some level of complexity in the integration which can be seen by some as a disadvantage. However, the net benefits in the level of overall performance for insertion loss, isolation and linearity outweighs the disadvantages.

Abstract: The present disclosure generally relates to any device capable of wireless communication, such as a mobile telephone or wearable device, having one or more antennas. After measuring reflection coefficients of a device at three different DVC states, the reflection coefficient for all other DVC states can be calculated. Thus, based solely upon three reflection coefficient measurements, the antenna can be tuned to adjust for any changes in impedance at the antenna.

Abstract: The present disclosure generally relates to any device capable of wireless communication, such as a mobile telephone or wearable device, having one or more antennas. After measuring reflection coefficients of a device at three different DVC states, the reflection coefficient for all other DVC states can be calculated. Thus, based solely upon three reflection coefficient measurements, the antenna can be tuned to adjust for any changes in impedance at the antenna.

Abstract: The present disclosure generally relates to a device having a capacitance sensor that detects a change in capacitance that occurs in the antenna whenever the antenna is in close proximity to a user's hand and/or head. Following detection of the capacitance change, the capacitance of the antenna may be changed by using a variable capacitor that is coupled to the sensor through a controller.

Abstract: The present disclosure generally relates to any device capable of wireless communication, such as a mobile telephone or wearable device, having one or more antennas. By applying a variable reactance (capacitive or inductive component) antenna aperture tuner within a simple, scalar antenna aperture tuning system, the maintenance of a constant antenna resonant frequency in the presence of environmental changes or head/hand effects is obtained. The variable reactance is used to adjust the resonant frequency of the antenna to stay at the desired target frequency in response to external variables that would otherwise shift the resonance away from the operating frequency of the device. Adjusting the resonant frequency of the antenna in response to externally induced changes maintains the radiating efficiency of the antenna and simultaneously avoids impedance mismatch between the antenna and the respective transmit/receive path in the radio, thereby minimizing transmission losses.

Abstract: The present disclosure generally relates to a device having a capacitance sensor that detects a change in capacitance that occurs in the antenna whenever the antenna is in close proximity to a user's hand and/or head. Following detection of the capacitance change, the capacitance of the antenna may be changed by using a variable capacitor that is coupled to the sensor through a controller.

Abstract: The present disclosure generally relates to a device having a capacitance sensor that detects a change in capacitance that occurs in the antenna whenever the antenna is in close proximity to a user's hand and/or head. Following detection of the capacitance change, the capacitance of the antenna may be changed by using a variable capacitor that is coupled to the sensor through a controller.

Abstract: The present disclosure generally relates to the combination of MEMS intrinsic technology with specifically designed solid state ESD protection circuits in state of the art solid state technology for RF applications. Using ESD protection in MEMS devices has some level of complexity in the integration which can be seen by some as a disadvantage. However, the net benefits in the level of overall performance for insertion loss, isolation and linearity outweighs the disadvantages.

Abstract: The present disclosure generally relates to any device capable of wireless communication, such as a mobile telephone or wearable device, having one or more antennas. By applying a variable reactance (capacitive or inductive component) antenna aperture tuner within a simple, scalar antenna aperture tuning system, the maintenance of a constant antenna resonant frequency in the presence of environmental changes or head/hand effects is obtained. The variable reactance is used to adjust the resonant frequency of the antenna to stay at the desired target frequency in response to external variables that would otherwise shift the resonance away from the operating frequency of the device. Adjusting the resonant frequency of the antenna in response to externally induced changes maintains the radiating efficiency of the antenna and simultaneously avoids impedance mismatch between the antenna and the respective transmit/receive path in the radio, thereby minimizing transmission losses.

Abstract: Embodiments disclosed herein generally relate to power amplifier matching circuits used for matching impedance and harmonic control in a device, such as a cellular phone. In one example, a power amplifier matching circuit includes two DVCs, four inductors, a transistor, and a capacitor. Utilizing the two DVCs, the impedance matching ratio and the center frequency of the circuit are capable of adjustment as needed. Moreover, the inclusion of the two DVCs may also prevent harmonic frequencies from undesirably passing through the power amplifier matching circuit to the antenna of a cellular device. The power amplifier matching circuit may be used in conjunction with an amplifier, where the output of the amplifier is proportional to the current in the circuit.

Abstract: Embodiments disclosed herein generally relate to power amplifier matching circuits used for matching impedance and harmonic control in a device, such as a cellular phone. In one example, a power amplifier matching circuit includes two DVCs, four inductors, a transistor, and a capacitor. Utilizing the two DVCs, the impedance matching ratio and the center frequency of the circuit are capable of adjustment as needed. Moreover, the inclusion of the two DVCs may also prevent harmonic frequencies from undesirably passing through the power amplifier matching circuit to the antenna of a cellular device. The power amplifier matching circuit may be used in conjunction with an amplifier, where the output of the amplifier is proportional to the current in the circuit.

Abstract: An apparatus includes: a first multiplexer configured to allow bi-directional communication over a first plurality of multiplexed communication bands that each include a corresponding transmit band and a corresponding receive band, wherein none of the transmit bands of the first multiplexer have transmit frequencies that overlap with any receive frequencies of any of the receive bands of the first multiplexer; a second multiplexer configured to allow bi-directional communication over a second plurality of multiplexed communication bands that each include a corresponding transmit band and a corresponding receive band, wherein none of the transmit bands of the second multiplexer have transmit frequencies that overlap with any receive frequencies of any of the receive bands of the second multiplexer; and an electromechanical band switch configured to selectively connect the first and second multiplexers to a common antenna.

Abstract: The present disclosure generally relates to a device having a capacitance sensor that detects a change in capacitance that occurs in the antenna whenever the antenna is in close proximity to a user's hand and/or head. Following detection of the capacitance change, the capacitance of the antenna may be changed by using a variable capacitor that is coupled to the sensor through a controller.

Abstract: The present disclosure generally relates to a device having a variable frequency filter that rejects harmonics generated by a variable reactance device. The variable frequency filter may be coupled to the antenna and the variable reactance device. The filter includes a variable capacitor and an inductor coupled together as a resonant circuit. The filter may be used in cellular technology to prevent harmonic frequencies that are created by another variable reactance device from reaching the antenna of the cellular device. Furthermore, the filter can reflect any receiving frequencies from the antenna and prevent the receiving frequencies from passing through.

Abstract: A substrate comprising a plurality of layers, a first side and a second side; and a via extending through the substrate from the first side to the second side. The via comprises:a first substrate via extending through a first layer of the plurality of layers, the first substrate via having a first cross-sectional area; a first capture pad disposed under the first substrate via, wherein the first capture pad physically contacts the first substrate via; a second substrate via extending through a second layer of the plurality of layers, the second substrate via physically contacting the first capture pad, the second substrate via having a second cross-sectional area that is greater than the first cross-sectional area; and a second thermal and electrical contact pad disposed under the second dielectric layer, wherein the second contact pad physically contacts the second substrate via.

Abstract: A device includes: an input for receiving an RF input signal having a signal format selected among a plurality of signal formats, including at least one signal format to be linearly amplified, and at least another signal format be amplified in saturation; at least a first and a second output; a first amplification path from the input to the first output that includes a first amplifier that operates in a linear amplification mode with respect to the RF input signal; a second amplification path from the input port to the second output that includes the first amplifier, and a second amplifier that operates in saturated amplification with respect to the RF input signal; and a path selection device that selectively passes the RF input signal through the first amplification path or the second amplification path in response to the selected signal format of the RF input signal.

Abstract: A semiconductor structure includes multiple semiconductor devices on a substrate and a metal layer disposed over the semiconductor devices, the metal layer comprising at least a first trace and a second trace. A conductive pillar is disposed directly on and in electrical contact with the first trace of the metal layer, and a dielectric layer is selectively disposed between the metal layer and the conductive pillar, where the dielectric layer electrically isolates the second trace from the pillar. A moisture barrier surrounds the semiconductor devices around a periphery of the semiconductor structure, and extends from the substrate through the dielectric layer to the conductive pillar.

Abstract: A semiconductor structure comprises a substrate and a metal layer disposed over the substrate. The metal layer comprises a first electrical trace and a second electrical trace. The semiconductor structure comprises a conductive pillar disposed directly on and in electrical contact with the first electrical trace; and a dielectric layer selectively disposed between the metal layer and the conductive pillar. The dielectric layer electrically isolates the second electrical trace from the pillar.

Abstract: A switching device has an input node, an output node, and a control node. The device includes: a substrate having a first side and a second side with a ground plane on the first side of the substrate and a mesa on the second side of the substrate. The mesa is made of a normally-conductive semiconductor material, and an isolation region substantially surrounds the mesa. A field effect transistor (FET) is on the mesa. The FET has an input terminal connected to the input node, an output terminal connected to the output node, and a gate. A capacitor is connected in series between the output terminal of the FET and the gate, and a resistor is connected in series between the control node and the gate. A gate electrode is directly connected to the gate. The gate electrode is disposed substantially entirely on the mesa.

Abstract: An apparatus includes: a first multiplexer configured to allow bi-directional communication over a first plurality of multiplexed communication bands that each include a corresponding transmit band and a corresponding receive band, wherein none of the transmit bands of the first multiplexer have transmit frequencies that overlap with any receive frequencies of any of the receive bands of the first multiplexer; a second multiplexer configured to allow bi-directional communication over a second plurality of multiplexed communication bands that each include a corresponding transmit band and a corresponding receive band, wherein none of the transmit bands of the second multiplexer have transmit frequencies that overlap with any receive frequencies of any of the receive bands of the second multiplexer; and an electromechanical band switch configured to selectively connect the first and second multiplexers to a common antenna.