Abstract: The invention provides a vertically oriented diode for use in delivering large amounts of current to a variable resistance element in a multi-state memory cell. The vertical diode is disposed in a diode container extending downwardly from the top of a tall oxide stack into a deep trench in single crystal silicon. The diode is formed of a combination of single crystal and/or polycrystalline silicon layers disposed vertically inside the diode container. The memory element is formed above the diode to complete a memory cell. The vertical construction of the diode provides a large diode surface area capable of generating a very large current flow through the memory element, as is required for programming. In this way, a highly effective diode can be created for delivering a large current without requiring the substrate surface space normally associated with such large diodes.