Patents by Inventor Raymond A. Sigsbee

Raymond A. Sigsbee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nb.sub.3 Ge superconductive films grown with air
    Patent number: 4154901
    Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing air into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb.sub.3 Ge on the heated substrate.
    Type: Grant
    Filed: March 6, 1978
    Date of Patent: May 15, 1979
    Assignee: General Electric Company
    Inventor: Raymond A. Sigsbee
  • Nb.sub.3 Ge Superconductive films
    Patent number: 4151329
    Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing oxygen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb.sub.3 Ge on the heated substrate.
    Type: Grant
    Filed: March 6, 1978
    Date of Patent: April 24, 1979
    Assignee: General Electric Company
    Inventor: Raymond A. Sigsbee
  • Mb.sub.3 Ge Superconductive films grown with nitrogen
    Patent number: 4151330
    Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing nitrogen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb.sub.3 Ge on the heated substrate.
    Type: Grant
    Filed: March 6, 1978
    Date of Patent: April 24, 1979
    Assignee: General Electric Company
    Inventor: Raymond A. Sigsbee
  • Nb.sub.3 Ge superconductive films grown with nitrogen
    Patent number: 4129167
    Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing nitrogen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb.sub.3 Ge on the heated substrate.
    Type: Grant
    Filed: July 18, 1977
    Date of Patent: December 12, 1978
    Assignee: General Electric Company
    Inventor: Raymond A. Sigsbee
  • Nb.sub.3 Ge superconductive films grown with air
    Patent number: 4129166
    Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing air into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb.sub.3 Ge on the heated substrate.
    Type: Grant
    Filed: July 18, 1977
    Date of Patent: December 12, 1978
    Assignee: General Electric Company
    Inventor: Raymond A. Sigsbee
  • Nb.sub.3 Ge superconductive films
    Patent number: 4128121
    Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing oxygen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposite a film of Nb.sub.3 Ge on the heated substrate.
    Type: Grant
    Filed: July 18, 1977
    Date of Patent: December 5, 1978
    Assignee: General Electric Company
    Inventor: Raymond A. Sigsbee
  • Resistive gate field effect transistor
    Patent number: 3946418
    Abstract: A resistive gate field effect transistor (FET) is disclosed in which the gate comprises a resistive film overlying an insulating layer and in contact with both the source and drain electrodes. This provides an integrated circuit, bidirectional voltage limiter in which the limiting voltage can be tailored to almost any value likely to be found on an integrated circuit. In another form of the present invention, a conductive gate is added between the resistive gate and the substrate.
    Type: Grant
    Filed: November 1, 1972
    Date of Patent: March 23, 1976
    Assignee: General Electric Company
    Inventors: Raymond A. Sigsbee, William D. Barber