Abstract: A method for spatial uniformity control in thin film processing is devised which is applicable to any film quality (thickness, composition, microstructure, electrical properties, etc.) as well as to all deposition systems (CVD, PVD, etch, ALD, etc.) where the substrate is rotated to improve uniformity of the deposited thin films. The technique is based on identifying the subspace of all deposition profiles on the stationary substrate that produce uniform films under rotation and then projecting a deposition profile to be controlled onto a sequence of uniformity—producing basis functions spanning that subspace to determine the Nearest Uniformity Producing Profile (NUPP). The process parameters as well as reactor design are optimized in order to minimize uniformity optimization criterion defined as a deviation of a produced deposition profile on the stalled substrate from the NUPP.

Abstract: A method for spatial uniformity control in thin film processing is devised which is applicable to any film quality (thickness, composition, microstructure, electrical properties, etc.) as well as to all deposition systems (CVD, PVD, etch, ALD, etc.) where the substrate is rotated to improve uniformity of the deposited thin films. The technique is based on identifying the subspace of all deposition profiles on the stationary substrate that produce uniform films under rotation and then projecting a deposition profile to be controlled onto a sequence of uniformity—producing basis functions spanning that subspace to determine the Nearest Uniformity Producing Profile (NUPP). The process parameters as well as reactor design are optimized in order to minimize uniformity optimization criterion defined as a deviation of a produced deposition profile on the stalled substrate from the NUPP.

Abstract: A multizone, segmented showerhead provides a gas impingement flux distribution which is controllable in two lateral dimensions to achieve programmable uniformity in chemical vapor deposition, in plasma deposition and etching and other processes. Recirculation (pumping) of exhaust gases back through the showerhead reduces intersegment mixing to achieve a high degree of spatial control of the process. This spatial control of the impinging gas flux distribution assures that uniformity can be achieved at process design points selected to optimize materials performance. Spatial control also permits rapid experimentation by enabling the introduction of intentional nonuniformities so that combinatorial data from across the wafer/substrate provides results of simultaneous experiments at different process design points. This ability is useful for process tuning and optimization in manufacturing or for rapid materials and process discovery and optimization in research and development.

Abstract: A multizone, segmented showerhead provides a gas impingement flux distribution which is controllable in two lateral dimensions to achieve programmable uniformity in chemical vapor deposition, in plasma deposition and etching and other processes. Recirculation (pumping) of exhaust gases back through the showerhead reduces intersegment mixing to achieve a high degree of spatial control of the process. This spatial control of the impinging gas flux distribution assures that uniformity can be achieved at process design points selected to optimize materials performance. Spatial control also permits rapid experimentation by enabling the introduction of intentional nonuniformities so that combinatorial data from across the wafer/substrate provides results of simultaneous experiments at different process design points. This ability is useful for process tuning and optimization in manufacturing or for rapid materials and process discovery and optimization in research and development.