Abstract: A polycrystalline super hard construction has a first region having a body of thermally stable polycrystalline super hard material having a plurality of intergrown grains of super hard material; a second region forming a substrate having a hard phase and a binder phase; and a third region interposed between the first and second regions. The third region includes a composite material having a first phase comprising a plurality of non-intergrown grains of super hard material, and a matrix material. A fourth region interposed between the second and third region has a major proportion having one or more components of the binder material of the second region, and one or more reaction products between the binder material of the second region and one or more components of the third region.

Abstract: A cutter element for an earth-boring tool, comprising a polycrystalline diamond (PCD) volume joined at an interface boundary to a cemented carbide substrate. The PCD volume includes a rake face opposite the interface boundary, an edge of the rake face being suitable as a cutting edge of the cutter element. The PCD volume comprises a plurality of strata directly joined to each other at inter-strata boundaries, in which each of a first plurality of the strata comprises PCD material having a first diamond content; each of a second plurality of the strata comprises PCD material having a second diamond content; the second diamond content being greater than the first diamond content; and the strata of the first and second pluralities disposed in an alternating arrangement with respect to each other.

Abstract: A polycrystalline diamond construction has a body of polycrystalline diamond (PCD) material; and a cemented carbide substrate bonded to the body of polycrystalline material along an interface. The cemented carbide substrate has tungsten carbide particles bonded together by a binder material, the binder material comprising Co; and the tungsten carbide particles form at least around 70 weight percent and at most around 95 weight percent of the substrate. The cemented carbide substrate has a bulk volume, the bulk volume of the cemented carbide substrate having at least around 0.1 vol. % of inclusions of free carbon having a largest average size in any one or more dimensions of less than around 40 microns.

Abstract: A polycrystalline diamond construction has a body of polycrystalline diamond (PCD) material; and a cemented carbide substrate bonded to the body of polycrystalline material along an interface. The cemented carbide substrate includes tungsten carbide particles bonded together by a binder material, the binder material comprising an alloy of Co, Ni and Cr; and the tungsten carbide particles form at least around 70 weight percent and at most around 95 weight percent of the substrate. The cemented carbide substrate has a bulk volume, the bulk volume of the cemented carbide substrate has at least around 0.1 vol. % of inclusions of free carbon having a largest average size in any one or more dimensions of less than around 40 microns.

Abstract: A cutter element for an earth-boring tool, comprising a polycrystalline diamond (PCD) volume joined at an interface boundary to a cemented carbide substrate. The PCD volume includes a rake face opposite the interface boundary, an edge of the rake face being suitable as a cutting edge of the cutter element. The PCD volume comprises a plurality of strata directly joined to each other at inter-strata boundaries, in which each of a first plurality of the strata comprises PCD material having a first diamond content; each of a second plurality of the strata comprises PCD material having a second diamond content; the second diamond content being greater than the first diamond content; and the strata of the first and second pluralities disposed in an alternating arrangement with respect to each other.

Abstract: A polycrystalline super hard construction has a first region comprising a body of thermally stable polycrystalline super hard material having an exposed surface forming a working surface, and a peripheral side edge, said polycrystalline super hard material comprising a plurality of intergrown grains of super hard material; a second region forming a substrate to the first region, the second region comprising a hard phase and a binder phase; and a third region interposed between the first and second regions, the third region extending across a surface of the second region along an interface. The third region comprises a composite material having a first phase comprising a plurality of non-intergrown grains of super hard material, and a matrix material.

Abstract: A method for manufacturing a plurality of synthetic single crystal diamonds, the method comprising: forming a plurality of seed pads, each seed pad comprising a plurality of single crystal diamond seeds anchored to, or embedded in, an inert holder; loading a carbon source, a metal catalyst, and the plurality of seed pads into a capsule; loading the capsule into a high pressure high temperature (HPHT) press; and subjecting the capsule to a HPHT growth cycle to grow single crystal diamond material on the plurality of single crystal diamond seeds, the HPHT growth cycle comprising: initiating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by increasing pressure and temperature; maintaining HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds via a pressure driven growth process by controlling and maintaining pressure and temperature; and terminating HPHT growth of single crystal diamond material on the plurality of single

Abstract: A capsule assembly for an ultra-high pressure furnace, comprising a containment tube having an interior side surface and defining a central longitudinal axis; a chamber suitable for accommodating a reaction assembly, a proximate and a distal end heater assembly, and a side heater assembly. When assembled, the chamber is contained within the containment tube and arranged longitudinally between the proximate and distal end heater assemblies. The side heater assembly is disposed adjacent the interior side surface and electrically connects the end heater assemblies with each other. Each end heater assembly has a respective peripheral side disposed adjacent the interior side surface Heat is produced in the chamber in response to an electric current flowing through the end and side heater assemblies.

Abstract: A capsule assembly for an ultra-high pressure furnace, comprising a containment tube defining a central longitudinal axis, a chamber suitable for accommodating a reaction assembly, a proximate and a distal end heater assembly, and a side heater assembly. When assembled, the chamber and the side heater assembly are contained within the containment tube and arranged longitudinally between the proximate and distal end heater assemblies. Each end heater assembly comprises a respective conduction volume forming a respective electrical path through the end heat assembly. The side heater assembly electrically connects the respective conducting volumes to each other, and heat is produced in the chamber in response to an electric current flowing through the side heater assembly and the conducting volumes. At least the proximate end heater assembly comprises a first insulation component including an outer insulation volume.

Abstract: A high pressure high temperature (HPHT) method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least (1) and a growth surface substantially parallel to a {110} crystallographic plane is utilized is described. The growth is effected at a temperature in the range from 1280° C. to 1390° C.

Abstract: The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilized. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a <100> or <110> direction in the plane of the growth surface.

Abstract: A method for manufacturing a plurality of synthetic single crystal diamonds, the method comprising: forming a plurality of seed pads, each seed pad comprising a plurality of single crystal diamond seeds anchored to, or embedded in, an inert holder; loading a carbon source, a metal catalyst, and the plurality of seed pads into a capsule; loading the capsule into a high pressure high temperature (HPHT) press; and subjecting the capsule to a HPHT growth cycle to grow single crystal diamond material on the plurality of single crystal diamond seeds, the HPHT growth cycle comprising: initiating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by increasing pressure and temperature; maintaining HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds via a pressure driven growth process by controlling and maintaining pressure and temperature; and terminating HPHT growth of single crystal diamond material on the plurality of single

Abstract: The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilised. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a <100> or <110> direction in the plane of the growth surface.

Abstract: The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilized. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a <100> or <110> direction in the plane of the growth surface.

Abstract: A high pressure high temperature (HPHT) method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least (1) and a growth surface substantially parallel to a {110} crystallographic plane is utilised is described. The growth is effected at a temperature in the range from 1280° C. to 1390° C.

Abstract: The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilised. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a <100> or <110> direction in the plane of the growth surface.