Abstract: Disclosed is a method for fabricating a circuit including thin film resistors (15) and capacitors (12, 13, 14, 16) on a single substrate whereby stabilization is effected after all such components are completely formed. A high pressure steam atmosphere is utilized for stabilization so that the resistors can be stabilized at lower temperatures and/or times and the capacitors are not degraded.

Abstract: A method of fabricating film circuits whereby thick film crossunders may be included with thin film capacitors (22) on a single substrate (10). At least one dielectric layer (12) is formed on the crossunder electrode (11) and a layer capable of smoothing irregularities (13) is also formed in the area of capacitor formation. Firing of the capacitor underlayer is compatible with the dielectric layer. A layer such as beta tantalum (14) is formed over essentially the entire circuit and etched from the contact areas (21) of the crossunder electrode. The layer is oxidized to form a protective layer (15) for the previously deposited layers as well as an underlay for subsequently formed thin film components.

Abstract: A method of fabricating a thin film semiconductor hybrid circuit is disclosed. After processing of the integrated circuit in the semiconductor wafer up to the point of establishing ohmic contacts (14) to devices (13), a thin film RC circuit is fabricated on an insulating layer (11,12) overlying the wafer. This is accomplished by first forming the capacitor anodes (15') on the insulator by depositing and etching a layer such as alpha tantalum. Resistors (16) are then formed by depositing and etching a layer such as tantalum nitride. Portions of the capacitor anodes are then anodized using an appropriate mask (17) to form the capacitor dielectric. Capacitor counterelectrodes (20') and interconnect conductors (20'") are formed by depositing and etching successive layers of metal such as nickel-chromium and gold. After all thin film components are formed, the resistors and capacitors are stabilized by heating the circuit in an atmosphere comprising high pressure steam.

Abstract: A novolak resin suitable for use as a light-sensitive photoresist or maskant is prepared by reaction of at least one cresol with an aldehyde or reactive ketone and an aromatic hydroxyl compound having an alkyl side chain of from 3-15 carbon atoms. The addition of a conventional photosensitive agent yields a composition evidencing superior characteristics as compared with prior art novolak photoresists and which requires less sensitizer than such prior art resists.