Abstract: A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at about 800.degree. C. to 1050.degree. C. when the substrates have been confined within a suitable coating environment.

Abstract: A method for producing a cesium-retentive waste form, characterized by a high degree of compositional stability and mechanical integrity, is provided by subjecting a cesium-loaded zeolite to heat under conditions suitable for stabilizing the zeolite and immobilizing the cesium, and coating said zeolite for sufficient duration within a suitable environment with at least one dense layer of pyrolytic carbon to seal therein said cesium to produce a final, cesium-bearing waste form. Typically, the zeolite is stabilized and the cesium immobilized in less than four hours by confinement within an air environment maintained at about 600.degree. C. Coatings are thereafter applied by confining the calcined zeolite within a coating environment comprising inert fluidizing and carbon donor gases maintained at 1,000.degree. C. for a suitable duration.