Patents by Inventor Raymond F. DePaula

Raymond F. DePaula has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120263951
    Abstract: Nanocomposite wires having conductivities higher than for metal wires were prepared by pulling tows from a supported array of multiwalled carbon nanotubes and sputter depositing metal on the tows, which resulted in transverse bridges between adjacent nanotubes in the tows. These transverse bridges of metal attached adjacent nanotubes to each other and provided paths for electricity to flow from one nanotube to another.
    Type: Application
    Filed: September 29, 2011
    Publication date: October 18, 2012
    Applicant: LOS ALAMOS NATIONAL SECURITY, LLC.
    Inventors: Fred Michael Mueller, Chris Randall Rose, Kenneth Ralph Marken, Raymond F. DePaula, Terry George Holesinger
  • Patent number: 7851412
    Abstract: The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
    Type: Grant
    Filed: February 15, 2007
    Date of Patent: December 14, 2010
    Assignee: Los Alamos National Security, LLC
    Inventors: Paul N. Arendt, Liliana Stan, Quanxi Jia, Raymond F. DePaula, Igor O. Usov
  • Publication number: 20090036313
    Abstract: A superconducting article comprising a substrate and a single composite layer deposited onto said substrate, wherein said single composite layer comprises Y2O3 and Al2O3, has a thickness of from about 20 nm to about 700 nm, and wherein the ratio of aluminum to yttrium is from about 10:1 to about 1:10; and wherein said superconducting article has a critical current density of at least 1 MA/cm2.
    Type: Application
    Filed: July 29, 2008
    Publication date: February 5, 2009
    Inventors: Liliana Stan, Igor Olegovich Usov, Quanxi Jia, Raymond F. DePaula
  • Publication number: 20080197327
    Abstract: The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
    Type: Application
    Filed: February 15, 2007
    Publication date: August 21, 2008
    Inventors: Paul N. Arendt, Liliana Stan, Quanxi Jia, Raymond F. DePaula, Igor O. Usov