Abstract: The present invention is an improved method for etching away portions of epitaxial layers in a multi-layer wafer to form a semiconductor. The method includes implanting ions throughout select portions of an epitaxial layer that are to be removed through etching. The ion implantation weakens the molecular structure of the implanted portions of the epitaxial layer and increases the vulnerability of the implanted portions to select liquid etchants or etching solutions. As such, the etching process has less impact on those portions of the epitaxial layer that were not subjected to ion implantation.