Patents by Inventor Raymond John Donohoe

Raymond John Donohoe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Edge removal of silicon-on-insulator transfer wafer
    Patent number: 7951718
    Abstract: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
    Type: Grant
    Filed: February 19, 2008
    Date of Patent: May 31, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Raymond John Donohoe, Krishna Vepa, Paul V. Miller, Ronald Rayandayan, Hong Wang
  • Edge Removal Of Silicon-On-Insulator Transfer Wafer
    Publication number: 20090061545
    Abstract: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
    Type: Application
    Filed: July 22, 2008
    Publication date: March 5, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Raymond John Donohoe, Krishna Vepa, Paul V. Miller, Ronald Rayandayan, Hong Wang, Christophe Maleville
  • Edge removal of silicon-on-insulator transfer wafer
    Patent number: 7402520
    Abstract: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
    Type: Grant
    Filed: November 26, 2004
    Date of Patent: July 22, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Raymond John Donohoe, Krishna Vepa, Paul V. Miller, Ronald Rayandayan, Hong Wang
  • EDGE REMOVAL OF SILICON-ON-INSULATOR TRANSFER WAFER
    Publication number: 20080138987
    Abstract: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
    Type: Application
    Filed: February 19, 2008
    Publication date: June 12, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Raymond John Donohoe, Krishna Vepa, Paul V. Miller, Ronald Rayandayan, Hong Wang