Patents by Inventor Raymond Joseph Notarantonio

Raymond Joseph Notarantonio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7607828
    Abstract: One embodiment of the invention relates to a circuit for over-stress protection. The circuit includes a temperature rate sensor configured to monitor the temperature of a semiconductor device during a first state. The circuit is further configured to selectively switch the semiconductor device from the first state to a second state if the temperature increases at a rate that has a predetermined relationship with a temperature rate function. Other methods and systems are also disclosed.
    Type: Grant
    Filed: September 22, 2006
    Date of Patent: October 27, 2009
    Assignee: Infineon Technologies AG
    Inventors: Robert Carl Beier, Raymond Joseph Notarantonio
  • Patent number: 7358683
    Abstract: A load driver circuit includes an output transistor configured to drive a load. The circuit further includes a power supply, and a power supply evaluation circuit configured to sense a characteristic of the power supply, and generate a control signal in response thereto. In addition, a controller circuit is provided and is configured to drive the output transistor with a pulse width modulation signal coupled to the control terminal, wherein a duty cycle of the pulse width modulation signal is a function of the control signal of the power supply evaluation circuit.
    Type: Grant
    Filed: October 25, 2005
    Date of Patent: April 15, 2008
    Assignee: Infineon Technologies AG
    Inventors: Christopher Brian LaGrave, Raymond Joseph Notarantonio, Robert Carl Beier
  • Publication number: 20080075142
    Abstract: One embodiment of the invention relates to a circuit for over-stress protection. The circuit includes a temperature rate sensor configured to monitor the temperature of a semiconductor device during a first state. The circuit is further configured to selectively switch the semiconductor device from the first state to a second state if the temperature increases at a rate that has a predetermined relationship with a temperature rate function. Other methods and systems are also disclosed.
    Type: Application
    Filed: September 22, 2006
    Publication date: March 27, 2008
    Inventors: Robert Carl Beier, Raymond Joseph Notarantonio