Patents by Inventor Raymond Klann

Raymond Klann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7465924
    Abstract: A system for detecting unsecured nuclear materials. Whereas current portal monitors rely in part on physical prominence to deter materials from entering the country, their application at intra-modal transport points may actually serve to divert the movement of nuclear materials rather than aid in interception. A flexible and low-profile system has been developed for unobtrusive detection and tracking of radioactive sources in transit suited for deployment at traffic choke points such as rest stops, toll collection plazas, truck stops, and bridges. The system includes gamma radiation detectors, networking for linking these detectors, signal processing algorithms, and a central processing and control unit.
    Type: Grant
    Filed: April 28, 2006
    Date of Patent: December 16, 2008
    Assignee: UChicago Argonne LLC
    Inventors: Raymond Klann, Richard B. Vilim, Young Soo Park
  • Publication number: 20080302967
    Abstract: A system for detecting unsecured nuclear materials. Whereas current portal monitors rely in part on physical prominence to deter materials from entering the country, their application at intra-modal transport points may actually serve to divert the movement of nuclear materials rather than aid in interception. A flexible and low-profile system has been developed for unobtrusive detection and tracking of radioactive sources in transit suited for deployment at traffic choke points such as rest stops, toll collection plazas, truck stops, and bridges. The system includes gamma radiation detectors, networking for linking these detectors, signal processing algorithms, and a central processing and control unit.
    Type: Application
    Filed: April 28, 2006
    Publication date: December 11, 2008
    Inventors: Raymond Klann, Richard B. Vilim, Young Soo Park
  • Patent number: 7164138
    Abstract: Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as 10B or 6LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.
    Type: Grant
    Filed: October 29, 2003
    Date of Patent: January 16, 2007
    Assignee: The Regents of the University of Michigan
    Inventors: Douglas S. McGregor, Raymond Klann
  • Publication number: 20050258372
    Abstract: Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as 10B or 6LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.
    Type: Application
    Filed: October 29, 2003
    Publication date: November 24, 2005
    Inventors: Douglas McGregor, Raymond Klann
  • Patent number: 6545281
    Abstract: The detection efficiency, or sensitivity, of a neutron detector material such as of Si, SiC, amorphous Si, GaAs, or diamond is substantially increased by forming one or more cavities, or holes, in its surface. A neutron reactive material such as of elemental, or any compound of, 10B, 6Li, 6LiF, U, or Gd is deposited on the surface of the detector material so as to be disposed within the cavities therein. The portions of the neutron reactive material extending into the detector material substantially increase the probability of an energetic neutron reaction product in the form of a charged particle being directed into and detected by the neutron detector material.
    Type: Grant
    Filed: July 6, 2001
    Date of Patent: April 8, 2003
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Douglas McGregor, Raymond Klann