Abstract: A carrier for a semiconductor die has a substrate with a cavity formed in the substrate. The cavity has a bottom and sidewalls, and the sidewalls have a stepped tier. Electrically conductive contacts are disposed on an underside of the substrate. Electrically conductive tabs are disposed on the stepped tier, and electrically conductive external bond terminals are disposed on an edge of the substrate. Electrically conductive paths are formed in the substrate and electrically coupled between the electrically conductive tabs, the electrically conductive contacts, and the electrically conductive external bond terminals.

Abstract: A carrier for a semiconductor die has a substrate with a cavity formed in the substrate. The cavity has a bottom and sidewalls, and the sidewalls have a stepped tier. Electrically conductive contacts are disposed on an underside of the substrate. Electrically conductive tabs are disposed on the stepped tier, and electrically conductive external bond terminals are disposed on an edge of the substrate. Electrically conductive paths are formed in the substrate and electrically coupled between the electrically conductive tabs, the electrically conductive contacts, and the electrically conductive external bond terminals.

Abstract: A carrier for a semiconductor die has a substrate with a cavity formed in the substrate. The cavity has a bottom and sidewalls, and the sidewalls have a stepped tier. Electrically conductive contacts are disposed on an underside of the substrate. Electrically conductive tabs are disposed on the stepped tier, and electrically conductive external bond terminals are disposed on an edge of the substrate. Electrically conductive paths are formed in the substrate and electrically coupled between the electrically conductive tabs, the electrically conductive contacts, and the electrically conductive external bond terminals.

Abstract: A carrier for a semiconductor die has a substrate with a cavity formed in the substrate. The cavity has a bottom and sidewalls, and the sidewalls have a stepped tier. Electrically conductive contacts are disposed on an underside of the substrate. Electrically conductive tabs are disposed on the stepped tier, and electrically conductive external bond terminals are disposed on an edge of the substrate. Electrically conductive paths are formed in the substrate and electrically coupled between the electrically conductive tabs, the electrically conductive contacts, and the electrically conductive external bond terminals.

Abstract: A semiconductor die carrier includes a radiation shielding base having a radiation shielding integrated base flange extending orthogonally from an upper surface of the base, the integrated base flange having an upper surface. A substrate is disposed on the radiation shielding base and around the integrated base flange, the substrate has an uppermost tier with an upper surface that is not higher than the upper surface of said integrated base flange. A radiation shielding seal lid has a radiation shielding integrated seal lid flange, the radiation shielding integrated seal lid flange has a lower surface disposed on the upper surface of the uppermost tier of the substrate.