Patents by Inventor Raymond L. Lavoie, JR.

Raymond L. Lavoie, JR. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polyurethane polishing pad
    Patent number: 9731398
    Abstract: The polishing pad is for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed from a prepolymer reaction of H12MDI/TDI with polytetramethylene ether glycol to form an isocyanate-terminated reaction product. The isocyanate-terminated reaction product has 8.95 to 9.25 weight percent unreacted NCO and has an NH2 to NCO stoichiometric ratio of 102 to 109 percent. The isocyanate-terminated reaction product is cured with a 4,4?-methylenebis(2-chlororaniline) curative agent. The cast polyurethane polymeric material, as measured in a non-porous state, having a shear storage modulus, G? of 250 to 350 MPa as measured with a torsion fixture at 30° C. and 40° C. and a shear loss modulus, G? of 25 to 30 MPa as measured with a torsion fixture at 40° C. The polishing pad having a porosity of 20 to 50 percent by volume and a density of 0.60 to 0.95 g/cm3.
    Type: Grant
    Filed: August 22, 2014
    Date of Patent: August 15, 2017
    Assignees: Rohm and Haas Electronic Materials CMP Holding, Inc., Dow Global Technologies LLC
    Inventors: Bainian Qian, Raymond L. Lavoie, Jr., Marty W. DeGroot, Benson Lee
  • Chemical mechanical polishing composition and method for polishing tungsten
    Patent number: 9275899
    Abstract: A composition and method for tungsten is provided comprising: a metal oxide abrasive; an oxidizer; a tungsten removal rate enhancing substance according to formula I; and, water; wherein the polishing composition exhibits an enhanced tungsten removal rate and a tungsten removal rate enhancement.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: March 1, 2016
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Yi Guo, Raymond L. Lavoie, Jr.
  • POLYURETHANE POLISHING PAD
    Publication number: 20160052103
    Abstract: The polishing pad is for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed from a prepolymer reaction of H12MDI/TDI with polytetramethylene ether glycol to form an isocyanate-terminated reaction product. The isocyanate-terminated reaction product has 8.95 to 9.25 weight percent unreacted NCO and has an NH2 to NCO stoichiometric ratio of 102 to 109 percent. The isocyanate-terminated reaction product is cured with a 4,4?-methylenebis(2-chlororaniline) curative agent. The cast polyurethane polymeric material, as measured in a non-porous state, having a shear storage modulus, G? of 250 to 350 MPa as measured with a torsion fixture at 30° C. and 40° C. and a shear loss modulus, G? of 25 to 30 MPa as measured with a torsion fixture at 40° C. The polishing pad having a porosity of 20 to 50 percent by volume and a density of 0.60 to 0.95 g/cm3.
    Type: Application
    Filed: August 22, 2014
    Publication date: February 25, 2016
    Inventors: Bainian Qian, Raymond L. Lavoie, JR., Marty W. DeGroot, Benson Lee
  • CHEMICAL MECHANICAL POLISHING COMPOSITION AND METHOD FOR POLISHING TUNGSTEN
    Publication number: 20150380295
    Abstract: A composition and method for tungsten is provided comprising: a metal oxide abrasive; an oxidizer; a tungsten removal rate enhancing substance according to formula I; and, water; wherein the polishing composition exhibits an enhanced tungsten removal rate and a tungsten removal rate enhancement.
    Type: Application
    Filed: June 27, 2014
    Publication date: December 31, 2015
    Inventors: Yi Guo, Raymond L. Lavoie, JR.
  • Method for chemical mechanical polishing tungsten
    Patent number: 8865013
    Abstract: A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.
    Type: Grant
    Filed: August 15, 2011
    Date of Patent: October 21, 2014
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Yi Guo, Jerry Lee, Raymond L. Lavoie, Jr., Guangyun Zhang
  • Method for chemical mechanical polishing tungsten
    Publication number: 20130045598
    Abstract: A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.
    Type: Application
    Filed: August 15, 2011
    Publication date: February 21, 2013
    Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Yi Guo, Jerry Lee, Raymond L. Lavoie, JR., Guangyun Zhang