Abstract: The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing solution comprises 0.001 to 2 wt % of a polyvinylalcohol copolymer, the polyvinylalcohol copolymer having a first component, a second component and a weight average molecular weight of 1,000 to 1,000,000 grams/mole, and the first component being 50 to 95 mole percent vinyl alcohol and the second component being more hydrophobic than the vinyl alcohol and 0.05 to 50 wt % silica abrasive particles; and the composition having a pH of 8 to 12.

Abstract: A polishing composition suitable for polishing semiconductor substrates comprises 0.001 to 2 wt % of a thermoplastic polymer; and 0.001 to 1 wt % of polyvinylpyrrolidone; wherein varying the weight ratio of thermoplastic polymer to the polyvinylpyrrolidone controls the removal rate of the non-ferrous interconnect.

Abstract: The present invention provides an aqueous composition useful for polishing copper on a semiconductor wafer comprising by weight percent 0.001 to 6 inhibitor for a nonferrous metal, 0.05 to 10 complexing agent for the metal, 0.01 to 25 copper removal agent for accelerating the removal of the copper, 0.5 to 40 abrasive, 0 to 10 selected from the group comprising, polyvinylpyrrolidone, thermoplastic polymer and mixtures thereof, wherein the copper removal agent is imidazole.

Abstract: A set of dies for crimping the connector to a structural member, such as an I-beam. The set of dies includes a pair of crimping dies provided within a compression for crimping tool. A pair of removable embossing dies is inserted into the crimping tool to initially emboss the surfaces of an I-beam flange. The embossing dies are removed and the connector is installed on the flange of the I-beam. The tool is positioned over the connector, and the crimp is made. Henceforth, pressure is applied to the tool by the crimping dies which would then crimp the connector in place.